Laboratory testing services

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SEM-EDX imaging

Imaging of the sample using a scanning electron microscope (SEM) with energy-dispersive X-ray spectroscopy (EDX or EDS). Typically, several images are taken with varying magnifications to get a good overview of the sample. An EDX mapping, line scan, or point measurement is …

Elemental analysis of solid and liquid samples with XRF

DIN 51418-1-08
XRF is a quantitative and qualitative method that can be used to analyze solid and liquid materials. This method is intended for a standard screening of homogeneous materials that do not …

ToF-ERDA measurement (Normal delivery)

Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA) can be used to measure the composition of solid samples quantitatively. It can be used for depth profiling. Tof-ERDA is capable of detecting all elements and distinguishing between …

SEM imaging

Imaging of the sample using scanning electron microscopy (SEM). Typically, several images are taken with varying magnifications to get a good overview of the sample. The sample can be prepared with a metallic coating for non-conductive samples. For cross-section measurement, an …

XRR of thin films or coatings

X-Ray Reflectometry (XRR) analysis is used to measure the density, thickness, and roughness of films. For film thickness measurements, the thickness should generally be below 300 nm (depending on the material) and the roughness should be low (<5 nm). If …

AFM surface roughness measurement

In this analysis, the surface roughness value (RMS) of the sample is determined with atomic force microscopy (AFM). The price includes three measurement points from the sample. The measurement area is 5 x 5 micrometers, if not agreed otherwise. In …

GI-XRD of thin films

Grazing Incidence X-ray diffraction (GI-XRD) measurement of thin film samples.

XRR + GI-XRD of thin films

Grazing Incidence X-ray diffraction (GI-XRD) measurement of thin films + X-ray reflectometry (XRR) analysis of thin films. Results include density (g/cm3), thickness (nm), and roughness (nm) values. For XRR, the thickness should generally be below 100 nm and …

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VPD ICP-MS

VPD ICP-MS allows the determination of trace metal contamination on the surface of wafers. The full surface of the wafer is scanned during the analysis. VPD ICP-MS analysis is performed using acid to dissolve the top surface of the wafer. The standard metal analysis includes the …

TEM-EDX imaging

Imaging of the sample with transmission electron microscopy (TEM) and determination of the elemental composition of the sample using electron dispersive X-ray spectroscopy (EDX or EDS). Several images with varying magnifications are taken to get a good overview of the sample. …

Ellipsometry measurement

Ellipsometry is an optical technique that characterizes polarized light reflected from a sample's surface. The thickness or the refractive index of the layer can be measured with this technique. This ellipsometry measurement is used to characterize thin films or …

TEM imaging

Imaging of the sample with transmission electron microscope (TEM). Typically, several images with varying magnifications are taken to get a good overview of the sample. TEM allows nm-resolution images. Solid samples often require FIB preparation, which is not included in the price. …

X-ray photoelectron spectroscopy (XPS)

XPS is a semi-quantitative technique that allows the measurement of the elemental composition of the surface of materials. In addition, it can also determine the binding and electronic state of the atoms. XPS is a surface-sensitive technique. …

ICP-MS for thin films on wafers

Determination of trace metal contamination in thin films on silicon wafers. Different methods can be used depending on the material and substrate. Please, contact our expert to discuss the feasibility of the measurement for your matrix.

Secondary ion mass spectrometry (SIMS)

Secondary ion mass spectrometry (SIMS) is a depth profiling method that can be used for a wide variety of solid materials to determine impurities or dopants. All elements from hydrogen to uranium can be detected. Standards are needed to get …

X-ray photoelectron spectroscopy (XPS) depth profiling

XPS depth profiling is the alternating between ion gun etching cycles and XPS analysis cycles. The technique provides semi-quantitative information on the elemental composition (at.%) as a function of depth. The …

TXRF measurement

Total reflection X-ray fluorescence (TXRF) allows for surface elemental composition measurement. It is often used to map trace contaminations. Detection limit: 109 – 1011 at/cm2 Depth resolution: about 3-9 nm (depending on the material)

XPS peak deconvolution - binding state of atoms

XPS is a semi-quantitative technique allowing to measure the elemental composition of the surface of materials. In addition, it can also determine the binding state of the atoms. If you wish to perform this test, please ask the …

AFM surface imaging

During this analysis, the surface of a smooth and hard sample is imaged with an atomic force microscope (AFM). Topological images are provided from several locations around the sample. The measurement area is 5 x 5 micrometers, if not agreed otherwise.

Nano scratch test

Nano Scratch Test of thin film samples. Typical measurement includes overview image of the scratch track (surface damage) and determination of critical load values.

High-resolution mass spectrometry (HRMS)

High-resolution mass spectrometry (HRMS) is an analytical technique for determining the exact molecular masses of various compounds. The high accuracy makes HRMS ideal for the identification of molecular structures, ranging from small …

Focused Ion Beam (FIB) preparation

Focused Ion Beam (FIB) preparation is performed on the sample. It allows to cut samples very precisely in order to observe them by TEM or SEM imaging. The price includes only the FIB preparation.

MicroCT scan (X-ray computed tomography)

Nondestructive 3D analysis of internal structures by X-ray computed tomography. The method visualizes voids, cracks, density, and phase differences within solid structures. The method is most suitable for powdered materials. The resolution …

Optical profilometry

Measurement of roughness or edge sharpness by optical profilometry.

Particle size distribution with TEM

Particle size distribution (PSD) is determined from transmission electron microscopy (TEM) images. The method is most suitable for small particles of 50 nm or smaller. Depending on the particle shapes, the method includes calculating the diameters …

RBS measurement (Fast delivery)

Rutherford Backscattering Spectrometry (RBS) can be used to measure the composition of solid samples quantitatively. The method can be used for depth profiling. RBS is used for the analysis of heavier elements and can be combined with ToF-ERDA when …

RBS measurement (Normal delivery)

Rutherford Backscattering Spectrometry (RBS) can be used to measure the composition of solid samples quantitatively and can be used for depth profiling. RBS is used for the analysis of heavier elements and can be combined with ToF-ERDA when lighter …

BPSG analysis

Determination of B and P in Borophosphosilicate glass.

GD-OES measurement

Glow Discharge-Optical Emission Spectroscopy (GD-OES) is a quantitative technique used to profile the elemental composition of a sample in depth. The technique is mainly used for quick depth profiling of thick materials, thus providing their elemental composition as a …

Group delay dispersion (GDD) and group velocity dispersion (GVD)

Group delay dispersion (GDD) and group velocity dispersion (GVD) are critical parameters for understanding how the propagation time and speed of light pulses change with frequency or wavelength as they …

LA-ICP-MS of thin film samples (70 elements)

Determination of metal concentrations on ALD thin films using LA-ICP-MS. The measurement includes the analysis of the following elements: Ag, Al, As, Au, B, Ba, Be, Bi, Br, Ca, Cd, Ce, Co, Cr, Cs, Cu, Dy, Er, Eu Fe, Ga, Gd, Ge, Hf, …

LA-ICP-MS of thin film samples (standard elements)

Determination of metal concentrations on ALD thin films using LA-ICP-MS. The standard analysis package includes the quantification of the following elements: Ca, Cr, Cu, Co, Er, Fe, Ge, Pb, Mn, Mo, Ni, K, Na, Sn, Ti, Ta, Zn, …

Dielectric strength of plastics

ASTM D149, IEC 60243-1
This analysis (IEC EN 60243-1) determines the dielectric strength of solid plastics by subjecting a flat plate of the sample to a gradually increasing voltage between two electrodes. The voltage at which the …

LA-ICP-MS of thin film samples (one element)

Determination of a metal concentration on an ALD thin film using LA-ICP-MS. The measurement includes the analysis of one element, which is selected upon odering. Values will be reported in ppm (μg/g).

Magnetometry with a vibrating-sample magnetometer

Magnetometry provides information on the magnetic properties of the sample material as a function of the magnetic field. A vibrating-sample magnetometer (VSM), also referred to as a Foner magnetometer, is used in the …

Picosecond ultrasonics

It is a non-destructive technique in which picosecond acoustic pulses penetrate into thin films or nanostructures to reveal internal features such as film thickness as well as cracks, delaminations, and voids.

Si wafer organic contamination by ATD GC-MS

SEMI MF 1982-1103
Automated thermal desorption gas chromatography-mass spectrometry (ATD-GC-MS) is a very sensitive method for wafer surface organic contamination analysis, providing low detection limits and a wide …

ToF-ERDA measurement (Priority option)

Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA) can be used to measure the composition of solid samples quantitatively. It can be used for depth profiling. Tof-ERDA is capable of detecting all elements and distinguishing between …

Type of testing

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