AFM surface imaging

Imaging of the sample with scanning transmission electron microscopy (STEM) and determination of the elemental composition of the sample using electron dispersive X-ray spectroscopy (EDX or EDS). Several images with varying magnifications are taken to get a good overview of the sample. An EDX mapping, line scan, or point measurement is collected to measure the sample composition (elemental at.% or wt.%). For solid samples, the analysis often requires FIB preparation, which is priced separately. HR-TEM can also be provided. Contact us for more details about the analysis options.

High-resolution imaging with a transmission electron microscope (TEM) for capturing morphology, crystal structure, and defects at nanometer resolution. Typically, several images with varying magnifications are taken to get a good overview of the sample. We also provide FIB preparation to analyze the cross-section of any specific site of interest, including microelectronic stacks and loose powders. HR-TEM for atomic-level resolution, STEM for high-contrast images, and cryo-TEM for sensitive samples are also possible. For complementary compositional analysis along with the structural data, TEM-EDX and TEM-EELS elemental analyses are available. Contact us for more details.

The focused ion beam (FIB) technique is used to prepare samples for electron microscopy. It allows very precise cutting of samples to observe them by TEM or SEM imaging. We are happy to provide a quote for FIB preparation on its own, as well as FIB-TEM or FIB-SEM analysis.

In this analysis, the surface roughness value (RMS) of the sample is determined with atomic force microscopy (AFM), typically with the Bruker Dimension Icon as the instrument. Three measurement points from the sample are included in a typical analysis. The measurement area is 5 x 5 micrometers, if not otherwise agreed. In addition to the RMS value, a 2D image, a 3D image, and raw data will be included in the test report.

Cryo-SEM imaging with EDX elemental mapping for fragile samples that require cryogenic preparation to withstand the SEM vacuum and electron beam. The analysis includes the following steps: Cryo-fixing of the sample., Imaging of the sample surface with a scanning electron microscope., EDX map for elemental composition.. The results will include 10–20 SEM images with annotations showing the observed features. 1–2 EDX elemental maps will also be provided, depending on the magnification.

Imaging of the sample using scanning electron microscopy (SEM). Typically, several images are taken with varying magnifications to get a good overview of the sample. Non-conductive samples can be prepared with a metallic coating to allow imaging. For cross-section measurement, additional preparation might be needed: FIB, BIB, or freeze fracturing. Cryo preparation is available for biological materials and other sensitive sample types. If compositional analysis is also needed, please see the SEM-EDX measurement. We also offer high-temperature SEM analyses at temperatures up to 1400 °C. Do not hesitate to ask for a quote.

Imaging of the sample using a scanning electron microscope (SEM) with energy-dispersive X-ray spectroscopy (EDX or EDS). Typically, several images are taken with varying magnifications to get a good overview of the sample. An EDX mapping, line scan, or point measurement is collected to measure the sample composition (elemental at.% or wt.%). Non-conductive samples can be prepared with a metallic coating. For cross-section measurement, additional preparation might be needed: FIB, BIB, or freeze fracturing.

X-Ray Reflectometry (XRR) analysis is used to measure the density (g/cm3), thickness (nm), and roughness (nm) of thin films. The method is applicable to the characterization of single- or multilayered thin films, as it provides information on the thickness and density of individual layers of the sample material as well as the roughness of the interphases. Greatest accuracy for XRR thickness measurements is generally achieved for samples containing 1-200 nm thick surface layers with under 5 nm RMS roughness. Thicker films and coatings with rougher surfaces can also be characterized, but the accuracy of thickness determination decreases as the thickness and roughness of the film or film stack increase. >150 mm wafers are typically cut to fit the sample holder. Please let us know if you need testing for larger wafers that cannot be cut into pieces. The available temperature range for XRR measurements is 25-1100 °C, and crystallinity can be studied as a function of temperature. The measurements can be performed under a normal atmosphere, inert gas, or vacuum. Measurements are typically performed using one of the following instruments: Rigaku SmartLab, Panalytical X'Pert Pro MRD, Bruker D8 Discover. Please let us know if you have a preference for a specific instrument.

Spreading resistance profiling is a contact-based electrical technique that measures resistivity and carrier concentration as a function of depth in silicon-substrate-based semiconductor samples. This makes it possible to accurately locate p-n junctions and verify doping profiles for individual device layers in, e.g., bipolar transistors and CMOS devices. The sample is beveled at a shallow angle (0.5–5°) to magnify the depth scale, and two tungsten carbide probes are stepped along the beveled surface under controlled pressure. The measured spreading resistance is converted to carrier concentration via calibration curves, and the results are reported as graphs of electrical resistance (Ω), resistivity (Ω∙cm), and carrier concentration (cm⁻³) versus depth (nm or µm). The displayed example price includes bevel preparation and SRP measurement of one unpatterned sample. Patterned samples can also be analyzed, and additional sample preparation (e.g., lift-off of surface layers) is available upon request. The measurement can also be combined with other services, including crystal orientation determination with XRD and chemical concentration analysis with SIMS. Please use the form below to request a quote for your analysis project.

Rutherford Backscattering Spectrometry (RBS) can be used to measure the composition of solid samples quantitatively at the surface as well as depth profiling. RBS is used for the analysis of heavy elements and can be combined with ToF-ERDA when lighter elements also need to be analyzed. Elements with similar mass can be difficult to differentiate.