Spreading resistance profiling (SRP) measurement

Simultaneous mapping of the local electrical conductivity and surface topography of thin films and other semiconductor materials using conductive atomic force microscopy (C-AFM). A bias voltage is applied between the conductive probe tip and the grounded sample, and the resulting current is recorded pixel by pixel across the scan area, producing co-registered topography and current maps at lateral resolutions of 20–50 nm. At selected points, the bias can be swept to generate local current-voltage (I-V) curves. The current detection range is approximately 1 pA to 10 µA; materials with resistivity above ~10⁹ Ω·cm cannot be reliably characterized. The results are reported as co-registered topography and current maps, resistance maps where applicable, and local I-V curves for selected measurement points.

X-Ray Reflectometry (XRR) analysis is used to measure the density (g/cm3), thickness (nm), and roughness (nm) of thin films. The method is applicable to the characterization of single- or multilayered thin films, as it provides information on the thickness and density of individual layers of the sample material as well as the roughness of the interphases. Greatest accuracy for XRR thickness measurements is generally achieved for samples containing 1-200 nm thick surface layers with under 5 nm RMS roughness. Thicker films and coatings with rougher surfaces can also be characterized, but the accuracy of thickness determination decreases as the thickness and roughness of the film or film stack increase. >150 mm wafers are typically cut to fit the sample holder. Please let us know if you need testing for larger wafers that cannot be cut into pieces. The available temperature range for XRR measurements is 25-1100 °C, and crystallinity can be studied as a function of temperature. The measurements can be performed under a normal atmosphere, inert gas, or vacuum. Measurements are typically performed using one of the following instruments: Rigaku SmartLab, Panalytical X'Pert Pro MRD, Bruker D8 Discover. Please let us know if you have a preference for a specific instrument.

During this analysis, the surface of a smooth and hard sample is imaged with an atomic force microscope (AFM). Topological images are typically provided from three locations around the sample. The measurement area is 5 x 5 micrometers, if not otherwise agreed. Measurements are typically done using the following instrument: Bruker Dimension Icon.

Rutherford Backscattering Spectrometry (RBS) can be used to measure the composition of solid samples quantitatively at the surface as well as depth profiling. RBS is used for the analysis of heavy elements and can be combined with ToF-ERDA when lighter elements also need to be analyzed. Elements with similar mass can be difficult to differentiate.

VPD ICP-MS allows the determination of trace metal contamination on the surface of wafers. The full surface of the wafer is scanned during the analysis, unless edge exclusion (2 mm, 5 mm, etc.) is requested. VPD ICP-MS is performed using acid to dissolve the top surface of the wafer before the determination of elemental concentrations with ICP-MS. Please note that lighter elements, such as H, C, N, O, and F, cannot be analyzed. We offer different analysis packages for a wide range of elements: 58 element analysis: Al, As, B, Ba, Be, Bi, Ca, Cd, Ce, Co, Cr, Cs, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Hg, Ho, In, K, La, Li, Lu, Mg, Mn, Mo, Na, Nb, Nd, Ni, Pb, Pr, Rb, Sb, Sc, Se, Sm, Sn, Sr, Ta, Tb, Te, Th, Ti, Tl, Tm, U, V, W, Y, Yb, Zn, Zr, 41 element analysis: Al, As, B, Ba, Be, Bi, Ca, Cd, Co, Cr, Cs, Cu, Ga, Ge, Fe, Hf, Ir, K, Li, Mg, Mn, Mo, Na, Nb, Ni, Pb, Re, Sb, Sn, Sr, Ta, Te, Th, Ti, Tl, U, W, V, Y, Zn, Zr, 30 element analysis: Al, As, B, Ba, Be, Bi, Ca, Cd, Co, Cr, Cu, Ga, Ge, Fe, K, Li, Mg, Mn, Mo, Na, Ni, Pb, Sb, Sn, Sr, Ti, W, V, Zn, Zr, Custom 30-element package: You choose any 30 elements from our full 58-element list., Additional noble metals: Add the analysis of noble metals to any package from the options given below: Ag, Au, Pd, Pt, Rh, Ru, Ag, Au, Pt, Pd.. Additional elements are available upon request, Detection limits are in the ppm–ppb range (106–1010at/cm2), See this example report: VPD ICP-MS analysis, for more details. This measurement is primarily intended for 100, 150, 200, and 300 mm bare-silicon wafers, but we also offer ICP-MS analyses for other wafer sizes and thin films up to a few µm thickness. The most typically used instruments include the following: Perkin-Elmer NexION 350S ICP-MS, Perkin-Elmer Sciex ELAN 6100 DRC II ICP-MS, Thermo Fisher iCAP TQe ICP-MS, Finnigan element2 ICP-MS. Express turnaround (2 or 3 business days) can be arranged upon request for an additional charge. Contact us for more information and to request a quote.

Determination of particle contamination on wafers or thin films up to 300 mm in diameter using an optical particle counter in a class 10 (ISO Class 4) cleanroom. We have access to several instruments (KLA-Tencor Surfscan 6200, Candela CS10V, etc.), and upon request, two different instruments can be used to cross-verify particle counts. The results are reported as particle counts by size range, in both tabular and histogram format. Contamination maps of wafer surfaces are also provided. Please note that the best-case detection limit of 0.08 µm applies to latex particles on bare silicon wafers. The smallest detectable particle size is typically higher for thin films due to interference from the coating. When requesting an offer, please disclose the size and number of wafers, and let us know whether they are bare or coated. In case of coated wafers, please also disclose the composition and approximate thickness of the film.

In situ electrical characterization of semiconductor samples using electron beam induced current (EBIC) mapping. The method enables direct imaging of electrically active defects not visible in purely morphological SEM images. The sample is placed in an SEM chamber and scanned with a focused electron beam, which generates electron-hole pairs in the material. The resulting minority-carrier current is mapped pixel by pixel and overlaid on simultaneously acquired secondary electron (SE) or backscattered electron (BSE) images to locate electrically active defects, junctions, and grain boundaries with sub-micron resolution. Minority-carrier diffusion length, surface recombination velocity, and junction position can also be extracted from line-profile decay curves. The acceleration voltage of the electron beam is fully adjustable, with the most commonly used range being 0.2 kV to 20 kV. The temperature can also be selected within the range of -40 °C to 200 °C. An ohmic or Schottky contact (e.g., a thin Au, Al, or Ti/Au layer) is deposited on the sample before analysis to enable carrier collection. Cross-sectional samples can be prepared using FIB preparation. The displayed price example applies to the EBIC mapping of a bare die with a 28nm process node. Please request a quote for your specific sample.

XPS is a semi-quantitative technique used to measure the elemental composition of material surfaces. In addition, it can also determine the binding state of the atoms. XPS is a surface-sensitive technique. Typical probing depth is 3-9 nm, and detection limits range roughly between 0.1 and 1 atomic %. XPS can measure elements from Li to U. The elemental composition is reported in at.% and measured on 1 area of a few 100 µm. Upon request, we can measure smaller areas or depth profiles, and a binding state determination can also be provided. Measurements are typically performed using one of the following instruments: PHI Genesis, Thermo Fisher ESCALAB 250Xi, PHI Quantum 2000. Synchrotron XPS is also available. Contact us for more information and a quote for your project.

Grazing incidence X-ray diffraction (GI-XRD) measurement for thin films and surface layers. The measurement provides the following information: XRD spectrum and identification of the phase(s), Crystallinity, crystallite size, lattice parameters, and strain of the phase. NOTE that these parameters are determined if the samples are highly crystalline. It may not be possible to determine them if the crystallinity is insufficient.. For a practical illustration of how the results are expressed, see our example report: GI-XRD measurement. Best GI-XRD results are typically achieved for samples containing up to 300 nm thick surface layers with under 10 nm RMS roughness. Thicker films and coatings with rougher surfaces can also be characterized, but the quality of the data is generally lower for rough samples, and the sample properties below 300 nm depths are typically not reflected in the results. One of the following instruments is typically used to perform the measurements: Rigaku SmartLab, Panalytical X'Pert Pro MPD, Bruker D8 Discover, Malvern Empyrean, GNR APD2000PRO. By default, the GI-XRD is conducted in ambient conditions, but temperatures of 25 to 1100 °C can be used to study crystallinity as a function of temperature. The measurements can also be performed under inert gas or vacuum if needed. Please contact our experts to discuss the available temperature and atmosphere combinations.

Determination of metal concentrations on semiconductors (coated or uncoated wafers) using LA-ICP-MS. The standard analysis package includes the quantification of the following elements: Ca, Cr, Cu, Co, Er, Fe, Ge, Pb, Mn, Mo, Ni, K, Na, Sn, Ti, Ta, Zn, Bi, Au, Sn, V, Sr, and Y. We also offer a 70-element package, where the following elements are quantified; Ag, Al, As, Au, B, Ba, Be, Bi, Br, Ca, Cd, Ce, Co, Cr, Cs, Cu, Dy, Er, Eu Fe, Ga, Gd, Ge, Hf, Hg, Ho, I, In, Ir, K, La, Li, Lu, Mg, Mn, Mo, Na, Nb, Nd, Ni, Os, P, Pb, Pd, Pr, Pt, Rb, Re, Rh, Ru, Sb, Sc, Se, Sm, Sn, Sr, Ta, Tb, Te, Th, Ti, Tl, Tm, U, V, W, Y, Yb, Zn, and Zr. Values will be reported in ppm (μg/g). Analysis of other elements outside of these packages may be possible. Contact us for details.