SEM-EBIC analysis

Simultaneous mapping of the local electrical conductivity and surface topography of thin films and other semiconductor materials using conductive atomic force microscopy (C-AFM). A bias voltage is applied between the conductive probe tip and the grounded sample, and the resulting current is recorded pixel by pixel across the scan area, producing co-registered topography and current maps at lateral resolutions of 20–50 nm. At selected points, the bias can be swept to generate local current-voltage (I-V) curves. The current detection range is approximately 1 pA to 10 µA; materials with resistivity above ~10⁹ Ω·cm cannot be reliably characterized. The results are reported as co-registered topography and current maps, resistance maps where applicable, and local I-V curves for selected measurement points.

This analysis, performed according to the IEC 60243-1 or ASTM D149 standards, determines the dielectric strength of solid plastics by subjecting a flat sample plate to a gradually increasing voltage between two electrodes. The voltage at which the plastic loses its insulating properties is known as the breakdown voltage. The dielectric strength is calculated by dividing the breakdown voltage by the thickness of the sample and is typically expressed in kilovolts per millimeter (kV/mm). Samples are preconditioned at 23 °C and 50% RH for 24 hours before testing and are tested in a surrounding medium of thermostated insulating oil to prevent flashover. Typical room-temperature analysis includes five tests at 23 °C. The dielectric strength is determined from the median of the test results. Five additional tests will be conducted if any single test result deviates by more than 15% from the median. The dielectric strength is then determined from the median of the 10 results. These additional tests do not affect the price of the analysis. Maximum dielectric strength 50 kV/mm. Cryogenic and high-temperature analysis options (up to 250 °C) are also available. Please contact us for a quote tailored to your project. Note that we also offer other tests to evaluate the electrical properties of plastics, including volume & surface resistivity and comparative tracking index (CTI) determination.

Superconducting materials conduct electricity with zero electrical resistance and enable stable magnetic levitation when cooled below their critical temperature. With access to high-field installations (resistive magnets up to 37 T), we offer several measurements for confirming materials' superconductivity under extreme temperature, magnetic field, and pressure conditions, including the following: Critical current density at 4.2 K in fields up to 15 T, Magnetization from 2–300 K in fields up to 9 T, Critical temperature (Tc) by transport or magnetization, Thermal expansion from 4.2–300 K, Thermal conductivity and specific heat capacity from 2–300 K, Critical current vs. strain at 77 K, Tensile testing at 4.2 or 77 K with forces up to 500 kN, Fatigue testing at 4.2 or 77 K, Fracture toughness at 4.2 or 77 K. These measurements support the functional characterization of materials such as high-temperature superconductor (HTS) wires, tapes, and coils, superconducting thin films, low-temperature superconducting cables and conductors, and components for superconducting magnets. Please contact us for more information and a quote.

Hall effect measurement enables the determination of key semiconductor parameters such as carrier mobility, carrier concentration, and Hall coefficient. In this measurement, a current is applied through the sample in combination with a perpendicular magnetic field. The resulting potential (Hall voltage) is measured, and by knowing the sample thickness and resistivity, typically measured by the van der Pauw method, the charge-carrier concentration and carrier mobility can be calculated. Measurements are typically performed from room temperature to 200 °C in air, but temperatures from -150 °C to 600 °C are available upon request. Typical measurement ranges: Charge carrier concentration: ~107–1021cm-3, Resistivity: ~10-4–107Ωcm, Mobility: ~0.1–107 cm2/Vs.

Four-point probe measurement is a method used to measure the resistivity and conductivity of conductive and semiconductive materials, including thin films. As the method uses separate current and voltage probes, the impact of contact resistance is minimized compared to a traditional two-point probe measurement. In a standard four-probe measurement setup, the probes are equally spaced from one another. By applying a known current through the two outer probes and measuring the voltages at the inner probes, sheet resistance can be determined by using Ohm's law. When samples have an arbitrary shape, it is common to use the van der Pauw method. In this case, the four probes are placed around the perimeter of the sample. Measurements can be performed from room temperature to 200 °C in air.

X-Ray Reflectometry (XRR) analysis is used to measure the density (g/cm3), thickness (nm), and roughness (nm) of thin films. The method is applicable to the characterization of single- or multilayered thin films, as it provides information on the thickness and density of individual layers of the sample material as well as the roughness of the interphases. Greatest accuracy for XRR thickness measurements is generally achieved for samples containing 1-200 nm thick surface layers with under 5 nm RMS roughness. Thicker films and coatings with rougher surfaces can also be characterized, but the accuracy of thickness determination decreases as the thickness and roughness of the film or film stack increase. >150 mm wafers are typically cut to fit the sample holder. Please let us know if you need testing for larger wafers that cannot be cut into pieces. The available temperature range for XRR measurements is 25-1100 °C, and crystallinity can be studied as a function of temperature. The measurements can be performed under a normal atmosphere, inert gas, or vacuum. Measurements are typically performed using one of the following instruments: Rigaku SmartLab, Panalytical X'Pert Pro MRD, Bruker D8 Discover. Please let us know if you have a preference for a specific instrument.

During this analysis, the surface of a smooth and hard sample is imaged with an atomic force microscope (AFM). Topological images are typically provided from three locations around the sample. The measurement area is 5 x 5 micrometers, if not otherwise agreed. Measurements are typically done using the following instrument: Bruker Dimension Icon.

We have various testing services available for ultrapure water. Pricing depends on the selected parameters and the number of samples. Please contact Measurlabs to get an offer. Note that we will provide suitable shipping containers based on the analyses that are ordered. Trace elements by ICP-MS For the determination of elemental impurities, we offer a basic 36-element and an extended 67-element package. The basic package includes the following 36 elements: Li, Be, B, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Sr, Zr, Nb, Mo, Ag, Cd, Sn, Sb, Ba, Ta, W, Pt, Au, Tl, Pb, and Bi. The extended analysis includes the following elements in addition to the basic package: Ce, Cs, Dy, Er, Eu, Gd, Hf, Ho, In, Ir, La, Lu, Hg, Nd, Os, Pd, Pr, Re, Rh, Rb, Ru, Sm, Sc, Se, Te, Tb, Th, Tm, U, Yb, and Y. Reporting limits depend on the element and specific sample matrix, but typically vary between 0.001 ppb and 0.6 ppb. For this analysis, samples must be delivered in Teflon containers. Hardness Hardness value can be calculated based on the ICP-MS results. Silicon and silica (Si, SiO2) Our service catalog includes the determination of total, dissolved, and colloidal silica (SiO2). Total silicon is analyzed using the ICP-OES technique, and dissolved silicon by UV-VIS (molybdenum heteropoly blue method). Colloidal silica is calculated as the difference between total silica and dissolved silica. Total organic and inorganic carbon (TOC and TIC) We offer TOC determination for ultrapure water samples with a 5 ppb quantification limit. For this analysis, samples must be delivered in certified 40 ml TOC vials. Total inorganic carbon (TIC) analysis can also be performed using a TOC analyzer. Anions by ion chromatography (IC) For anions, we have a basic package and a separate package for organic anions. The basic package includes the following anions: bromide(Br⁻), chloride (Cl⁻), fluoride (F⁻), nitrate (NO₃⁻), nitrite (NO₂⁻), phosphate (PO₄³⁻), and sulfate (SO₄²⁻). Analysis of organic anions includes: acetate, formate, glycolate, propionate, and butyrate. Reporting limits depend on the anion and sample matrix, but typically vary between 0.02 and 1 ppb for basic anions and are around 25 ppb for organic anions. For this analysis, samples must be delivered in HDPE bottles. Cations by ion chromatography (IC) The analysis package for cations includes the determination of the following cations: ammonium (NH4+), calcium (Ca2+), lithium (Li+), magnesium (Mg2+), potassium (K+), and sodium (Na+). Reporting limits typically vary between 2 ppb and 5 ppb. Samples must be delivered in HDPE bottles. PFAS compounds (24 compounds) Analysis includes PFOS, PFOA, PFNA, PFHxS, and 20 other selected PFAS compounds. The complete list of compounds can be provided upon request. The reporting limit is typically 1 ng/L. The sample must be delivered in a plastic PFAS-free bottle, preferably made from HDPE.

Rutherford Backscattering Spectrometry (RBS) can be used to measure the composition of solid samples quantitatively at the surface as well as depth profiling. RBS is used for the analysis of heavy elements and can be combined with ToF-ERDA when lighter elements also need to be analyzed. Elements with similar mass can be difficult to differentiate.

VPD ICP-MS allows the determination of trace metal contamination on the surface of wafers. The full surface of the wafer is scanned during the analysis, unless edge exclusion (2 mm, 5 mm, etc.) is requested. VPD ICP-MS is performed using acid to dissolve the top surface of the wafer before the determination of elemental concentrations with ICP-MS. Please note that lighter elements, such as H, C, N, O, and F, cannot be analyzed. We offer different analysis packages for a wide range of elements: 58 element analysis: Al, As, B, Ba, Be, Bi, Ca, Cd, Ce, Co, Cr, Cs, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Hg, Ho, In, K, La, Li, Lu, Mg, Mn, Mo, Na, Nb, Nd, Ni, Pb, Pr, Rb, Sb, Sc, Se, Sm, Sn, Sr, Ta, Tb, Te, Th, Ti, Tl, Tm, U, V, W, Y, Yb, Zn, Zr, 41 element analysis: Al, As, B, Ba, Be, Bi, Ca, Cd, Co, Cr, Cs, Cu, Ga, Ge, Fe, Hf, Ir, K, Li, Mg, Mn, Mo, Na, Nb, Ni, Pb, Re, Sb, Sn, Sr, Ta, Te, Th, Ti, Tl, U, W, V, Y, Zn, Zr, 30 element analysis: Al, As, B, Ba, Be, Bi, Ca, Cd, Co, Cr, Cu, Ga, Ge, Fe, K, Li, Mg, Mn, Mo, Na, Ni, Pb, Sb, Sn, Sr, Ti, W, V, Zn, Zr, Custom 30-element package: You choose any 30 elements from our full 58-element list., Additional noble metals: Add the analysis of noble metals to any package from the options given below: Ag, Au, Pd, Pt, Rh, Ru, Ag, Au, Pt, Pd.. Additional elements are available upon request, Detection limits are in the ppm–ppb range (106–1010at/cm2), See this example report: VPD ICP-MS analysis, for more details. This measurement is primarily intended for 100, 150, 200, and 300 mm bare-silicon wafers, but we also offer ICP-MS analyses for other wafer sizes and thin films up to a few µm thickness. The most typically used instruments include the following: Perkin-Elmer NexION 350S ICP-MS, Perkin-Elmer Sciex ELAN 6100 DRC II ICP-MS, Thermo Fisher iCAP TQe ICP-MS, Finnigan element2 ICP-MS. Express turnaround (2 or 3 business days) can be arranged upon request for an additional charge. Contact us for more information and to request a quote.