Anupam Glorious Lobo

Simultaneous mapping of the local electrical conductivity and surface topography of thin films and other semiconductor materials using conductive atomic force microscopy (C-AFM). A bias voltage is applied between the conductive probe tip and the grounded sample, and the resulting current is recorded pixel by pixel across the scan area, producing co-registered topography and current maps at lateral resolutions of 20–50 nm. At selected points, the bias can be swept to generate local current-voltage (I-V) curves. The current detection range is approximately 1 pA to 10 µA; materials with resistivity above ~10⁹ Ω·cm cannot be reliably characterized. The results are reported as co-registered topography and current maps, resistance maps where applicable, and local I-V curves for selected measurement points.

In situ electrical characterization of semiconductor samples using electron beam induced current (EBIC) mapping. The method enables direct imaging of electrically active defects not visible in purely morphological SEM images. The sample is placed in an SEM chamber and scanned with a focused electron beam, which generates electron-hole pairs in the material. The resulting minority-carrier current is mapped pixel by pixel and overlaid on simultaneously acquired secondary electron (SE) or backscattered electron (BSE) images to locate electrically active defects, junctions, and grain boundaries with sub-micron resolution. Minority-carrier diffusion length, surface recombination velocity, and junction position can also be extracted from line-profile decay curves. The acceleration voltage of the electron beam is fully adjustable, with the most commonly used range being 0.2 kV to 20 kV. The temperature can also be selected within the range of -40 °C to 200 °C. An ohmic or Schottky contact (e.g., a thin Au, Al, or Ti/Au layer) is deposited on the sample before analysis to enable carrier collection. Cross-sectional samples can be prepared using FIB preparation. The displayed price example applies to the EBIC mapping of a bare die with a 28nm process node. Please request a quote for your specific sample.