VPD ICP-MS allows the determination of trace metal contamination on the surface of bare silicon wafers and thin films. The full surface of the wafer is scanned during the analysis.
VPD ICP-MS analysis for bare-silicon wafers is performed using hydrofluoric acid (HF) as a vapor reacting with the native oxide layer, condensing on top of the sample, and finally dissolving trace metals within the sample. In the case of thin films, nitric acid is used instead of HF.
The standard metal analysis includes quantification of the following elements: Li, B, Na, Mg, Al, P, K, Ca, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ge, As, Y, Mo, Sn, Ba, Ce, Hf, Ta, W, and Pb.
The noble metal analysis includes quantifying the following elements: Ru, Pd, Ag, Pt, and Au.
Elements such as H, C, N, O, or F cannot be analyzed by the ICP-MS method.
Analysis can be performed on 100, 150, 200, and 300 mm bare-silicon wafers or wafers with thin film samples. Other sizes are also possible – contact us!
More information about the method family:Vapour phase decomposition ICP-MS (VPD-ICP-MS)
- Suitable sample matrices
- Thin films, coatings, silicon wafers
- Minimum sample amount
- Full wafer
- Typical turnaround time
- 3 weeks after receiving the samples
- Detection limit
- Ppm - ppb
- Quality system
- Accredited testing laboratory
- Device types
- Method expert
- Charlotte Zborowski