VPD ICP-MS allows the determination of trace metal contamination on the surface of bare silicon wafers and thin films. The full surface of the wafer is scanned during the analysis.
VPD ICP-MS analysis is performed using acid to dissolve the top surface of the wafer.
The standard metal analysis includes the quantification of elements such as Li, B, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ge, As, Mo, Sn, Ba, W, and Pb.
The noble metal analysis includes quantifying the following elements: Pd, Ag, Pt, and Au.
Elements such as H, C, N, O, or F cannot be analyzed by the ICP-MS method.
Analysis can be performed on 100, 150, 200, and 300 mm bare-silicon wafers or wafers with thin films.
For other sizes or elements or thin-film testing – contact us!
Detection limit: ppm - ppb (107-109at/cm2)
More information about the method family:Vapour phase decomposition ICP-MS (VPD-ICP-MS)
- Suitable sample matrices
- Thin films, coatings, silicon wafers
- Required sample quantity
- Full wafer
- Typical turnaround time
- 3 weeks after receiving the samples
- Quality system
- Measurlabs validated method
- Device types