VPD-ICP-MS

Determination of trace metal contamination on silicon wafers and thin film surfaces using the VPD-ICP-MS method. There are two different options for the VPD-ICP-MS: VPD-ICP-MS for bare-silicon wafers and VPD-ICP-MS for thin film samples. "Traditional" VPD-ICP-MS analysis for the bare-silicon wafer is performed using hydrofluoric acid (HF) as a vapor reacting with the native oxide layer, condensing on top of the sample, and finally dissolving trace metals of the sample. In addition to that, we can analyze thin films on top of the substrates using a VPD-ICP-MS-like method. This is a similar method to VPD-ICP-MS, but instead of HF, nitric acid is used. This method also requires more manual work, which is why it is slightly more expensive compared to traditional VPD-ICP-MS. The standard metal analysis includes quantification of the following elements: Li, B, Na, Mg, Al, P, K, Ca, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ge, As, Y, Mo, Sn, Ba, Ce, Hf, Ta, W, and Pb. The noble metal analysis includes quantifying the following elements: Ru, Pd, Ag, Pt, and Au. Analysis can be done for 100, 150, 200, and 300 mm bare-silicon wafers or wafers with thin film samples. Other sizes are also possible – contact us!

SemiconductorsSurface testing

Suitable sample matrices

Thin films, ALD samples, silicon wafers

Typical turnaround time

3 weeks after receiving the samples

Quality system

Accredited testing laboratory

Device types

VPD-ICP-MS

Method expert

Kia Bertula