VPD ICP-MS

VPD ICP-MS allows the determination of trace metal contamination on the surface of bare silicon wafers and thin films. The full surface of the wafer is scanned during the analysis.

VPD ICP-MS analysis for bare-silicon wafers is performed using hydrofluoric acid (HF) as a vapor reacting with the native oxide layer, condensing on top of the sample, and finally dissolving trace metals within the sample. In the case of thin films, nitric acid is used instead of HF.

The standard metal analysis includes quantification of the following elements: Li, B, Na, Mg, Al, P, K, Ca, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ge, As, Y, Mo, Sn, Ba, Ce, Hf, Ta, W, and Pb.

The noble metal analysis includes quantifying the following elements: Ru, Pd, Ag, Pt, and Au.

Elements such as H, C, N, O, or F cannot be analyzed by the ICP-MS method.

Analysis can be performed on 100, 150, 200, and 300 mm bare-silicon wafers or wafers with thin film samples. Other sizes are also possible – contact us!

Suitable sample matrices
Thin films, coatings, silicon wafers
Minimum sample amount
Full wafer
Typical turnaround time
3 weeks after receiving the samples
Detection limit
Ppm - ppb
Quality system
Accredited testing laboratory
Device types
Method expert
Charlotte Zborowski

Order this test online

First sample (VAT 0):
743 €
Additional samples (VAT 0):
535 €per sample
If you have a large number of samples, contact us for a possible discount.

Samples are entered during checkout.

Our experts review all orders to ensure the testing method is suitable for your needs and samples.

Questions? We're happy to help.

Questions? We're happy to help.

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