VPD ICP-MS allows the determination of trace metal contamination on the surface of bare silicon wafers and thin films. The full surface of the wafer is scanned during the analysis.

VPD ICP-MS analysis is performed using acid to dissolve the top surface of the wafer.

The standard metal analysis includes the quantification of elements such as Li, B, Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ge, As, Mo, Sn, Ba, W, and Pb.

The noble metal analysis includes quantifying the following elements: Pd, Ag, Pt, and Au.

Elements such as H, C, N, O, or F cannot be analyzed by the ICP-MS method.

Analysis can be performed on 100, 150, 200, and 300 mm bare-silicon wafers or wafers with thin films.

For other sizes or elements or thin-film testing – contact us!

Detection limit: ppm - ppb (107-109at/cm2)

Suitable sample matrices
Thin films, coatings, silicon wafers
Required sample quantity
Full wafer
Typical turnaround time
3 weeks after receiving the samples
Quality system
Measurlabs validated method
Device types
Method expert
Charlotte Zborowski

Order this test online

First sample (VAT 0):
580 €
Additional samples (VAT 0):
445 €per sample
If you have a large number of samples, contact us for a possible discount.

Samples are entered during checkout.

Our experts review all orders to ensure the testing method is suitable for your needs and samples.

Large number of samples or specialized needs?

Questions? We're happy to help.

Questions? We're happy to help.

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Have questions or need help? Email us at or call +358 50 336 6128.