Determination of trace metal contamination on silicon wafer and thin film surfaces using VPD-ICP-MS method. There are two different options for the VPD-ICP-MS: VPD-ICP-MS for bare-silicon wafer and VPD-ICP-MC for thin film samples. "Traditional" VPD-ICP-MS analysis for the bare-silicon wafer is performed using hydrofluoric acid (HF) as a vapor reacting with the native oxide layer, condensing on top of the sample, and finally dissolving trace metals of the sample. In addition to that, we can analyze thin films on top of the substrates using the VPD-ICP-MS like method. This is a similar method to VPD-ICP-MS, but instead of HF, nitric acid is used. This method requires also more manual work, which is a reason why it is slightly more expensive compared to traditional VPD-ICP-MS. Standard metal analysis includes quantifying of following elements: Li, B, Na, Mg, Al, P, K, Ca, Ti, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ge, As, Y, Mo, Sn, Ba, Ce, Hf, Ta, W, and Pb. Noble metal analysis includes quantifying of following elements: Ru, Pd, Ag, Pt, and Au. Analysis can be done for 100, 150, 200, and 300 mm bare-silicon wafers or wafers with thin film samples. Other sizes are also possible – contact us!
More information about the method family:Vapour phase decomposition ICP-MS (VPD-ICP-MS)
- Suitable sample matrices
- Thin films, ALD samples, silicon wafers
- Typical turnaround time
- 3 weeks after receiving the samples
- Quality system
- Accredited testing laboratory
- Device families
- Method expert
Interested in this measurement?
You can order this measurement via online checkout. Just fill in a few details below: