X-ray photoelectron spectroscopy (XPS)

Rutherford Backscattering Spectrometry (RBS) can be used to measure the composition of solid samples quantitatively at the surface as well as depth profiling. RBS is used for the analysis of heavy elements and can be combined with ToF-ERDA when lighter elements also need to be analyzed. Elements with similar mass can be difficult to differentiate.

Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA) measurement for determining the elemental concentrations of thin films. ToF-ERDA is capable of identifying all elements, including various hydrogen isotopes. It provides elemental depth profiles by determining the concentration of each element at different depths within a sample. Typically, the method achieves detection limits ranging from 0.1 to 0.5 atomic percent and depth resolution between 5 and 20 nm. It is suitable for analyzing films with thicknesses between 20 and 500 nm. For accurate measurements, the sample surface should be smooth, with a roughness of less than 10 nm. The method is inherently quantitative when analyzing thin films on typical substrates, such as silicon (Si), gallium nitride (GaN), silicon carbide (SiC), gallium arsenide (GaAs), or indium phosphide (InP). So, reference samples are not needed to obtain quantitative results. The technique is particularly useful when analyzing light elements due to its good detection limits. In addition to typical ToF-ERDA measurements, we also offer LI-ERDA (also referred to as Foil ERDA) for more precise determination of hydrogen isotopes. The detection limits with LI-ERDA are typically around 0.01 atomic percent, and depth resolutions of ~1nm can be achieved. LI-ERDA only allows detection of hydrogen isotopes. To see how the results are reported, see this example report: ToF-ERDA measurement.

Auger Electron Spectroscopy (AES) is a surface-sensitive technique (3-9 nm) used for compositional analysis and depth profiling, providing data on the elemental composition in depth. Secondary electron images can also be provided. AES is a very useful technique to measure patterns since it has a beam size that can go down to a few nm.

In XPS depth profiling, ion gun etching cycles and XPS analysis cycles are alternated to obtain semi-quantitative information on the elemental composition (at.%) of the sample as a function of depth. The binding states of atoms can also be analyzed as a function of depth to determine the chemistry of the sample and its variations with depth. XPS depth profiling is a destructive technique with an analysis area diameter ranging from 10 µm to several 100 µm. Sputtering is done with an Ar-cluster GCIB ion beam or Ar monoatomic ions, and XPS measurements are typically performed using one of the following instruments: PHI Genesis, Thermo Fisher ESCALAB 250Xi, PHI Quantum 2000.

X-Ray Reflectometry (XRR) analysis is used to measure the density (g/cm3), thickness (nm), and roughness (nm) of thin films. The method is applicable to the characterization of single- or multilayered thin films, as it provides information on the thickness and density of individual layers of the sample material as well as the roughness of the interphases. Greatest accuracy for XRR thickness measurements is generally achieved for samples containing 1-200 nm thick surface layers with under 5 nm RMS roughness. Thicker films and coatings with rougher surfaces can also be characterized, but the accuracy of thickness determination decreases as the thickness and roughness of the film or film stack increase. >150 mm wafers are typically cut to fit the sample holder. Please let us know if you need testing for larger wafers that cannot be cut into pieces. The available temperature range for XRR measurements is 25-1100 °C, and crystallinity can be studied as a function of temperature. The measurements can be performed under a normal atmosphere, inert gas, or vacuum. Measurements are typically performed using one of the following instruments: Rigaku SmartLab, Panalytical X'Pert Pro MRD, Bruker D8 Discover. Please let us know if you have a preference for a specific instrument.

During this analysis, the surface of a smooth and hard sample is imaged with an atomic force microscope (AFM). Topological images are typically provided from three locations around the sample. The measurement area is 5 x 5 micrometers, if not otherwise agreed. Measurements are typically done using the following instrument: Bruker Dimension Icon.

Spreading resistance profiling is a contact-based electrical technique that measures resistivity and carrier concentration as a function of depth in silicon-substrate-based semiconductor samples. This makes it possible to accurately locate p-n junctions and verify doping profiles for individual device layers in, e.g., bipolar transistors and CMOS devices. The sample is beveled at a shallow angle (0.5–5°) to magnify the depth scale, and two tungsten carbide probes are stepped along the beveled surface under controlled pressure. The measured spreading resistance is converted to carrier concentration via calibration curves, and the results are reported as graphs of electrical resistance (Ω), resistivity (Ω∙cm), and carrier concentration (cm⁻³) versus depth (nm or µm). The displayed example price includes bevel preparation and SRP measurement of one unpatterned sample. Patterned samples can also be analyzed, and additional sample preparation (e.g., lift-off of surface layers) is available upon request. The measurement can also be combined with other services, including crystal orientation determination with XRD and chemical concentration analysis with SIMS. Please use the form below to request a quote for your analysis project.

We have various testing services available for ultrapure water. Pricing depends on the selected parameters and the number of samples. Please contact Measurlabs to get an offer. Note that we will provide suitable shipping containers based on the analyses that are ordered. Trace elements by ICP-MS For the determination of elemental impurities, we offer a basic 36-element and an extended 67-element package. The basic package includes the following 36 elements: Li, Be, B, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Sr, Zr, Nb, Mo, Ag, Cd, Sn, Sb, Ba, Ta, W, Pt, Au, Tl, Pb, and Bi. The extended analysis includes the following elements in addition to the basic package: Ce, Cs, Dy, Er, Eu, Gd, Hf, Ho, In, Ir, La, Lu, Hg, Nd, Os, Pd, Pr, Re, Rh, Rb, Ru, Sm, Sc, Se, Te, Tb, Th, Tm, U, Yb, and Y. Reporting limits depend on the element and specific sample matrix, but typically vary between 0.001 ppb and 0.6 ppb. For this analysis, samples must be delivered in Teflon containers. Hardness Hardness value can be calculated based on the ICP-MS results. Silicon and silica (Si, SiO2) Our service catalog includes the determination of total, dissolved, and colloidal silica (SiO2). Total silicon is analyzed using the ICP-OES technique, and dissolved silicon by UV-VIS (molybdenum heteropoly blue method). Colloidal silica is calculated as the difference between total silica and dissolved silica. Total organic and inorganic carbon (TOC and TIC) We offer TOC determination for ultrapure water samples with a 5 ppb quantification limit. For this analysis, samples must be delivered in certified 40 ml TOC vials. Total inorganic carbon (TIC) analysis can also be performed using a TOC analyzer. Anions by ion chromatography (IC) For anions, we have a basic package and a separate package for organic anions. The basic package includes the following anions: bromide(Br⁻), chloride (Cl⁻), fluoride (F⁻), nitrate (NO₃⁻), nitrite (NO₂⁻), phosphate (PO₄³⁻), and sulfate (SO₄²⁻). Analysis of organic anions includes: acetate, formate, glycolate, propionate, and butyrate. Reporting limits depend on the anion and sample matrix, but typically vary between 0.02 and 1 ppb for basic anions and are around 25 ppb for organic anions. For this analysis, samples must be delivered in HDPE bottles. Cations by ion chromatography (IC) The analysis package for cations includes the determination of the following cations: ammonium (NH4+), calcium (Ca2+), lithium (Li+), magnesium (Mg2+), potassium (K+), and sodium (Na+). Reporting limits typically vary between 2 ppb and 5 ppb. Samples must be delivered in HDPE bottles. PFAS compounds (24 compounds) Analysis includes PFOS, PFOA, PFNA, PFHxS, and 20 other selected PFAS compounds. The complete list of compounds can be provided upon request. The reporting limit is typically 1 ng/L. The sample must be delivered in a plastic PFAS-free bottle, preferably made from HDPE.

VPD ICP-MS allows the determination of trace metal contamination on the surface of wafers. The full surface of the wafer is scanned during the analysis, unless edge exclusion (2 mm, 5 mm, etc.) is requested. VPD ICP-MS is performed using acid to dissolve the top surface of the wafer before the determination of elemental concentrations with ICP-MS. Please note that lighter elements, such as H, C, N, O, and F, cannot be analyzed. We offer different analysis packages for a wide range of elements: 58 element analysis: Al, As, B, Ba, Be, Bi, Ca, Cd, Ce, Co, Cr, Cs, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Hg, Ho, In, K, La, Li, Lu, Mg, Mn, Mo, Na, Nb, Nd, Ni, Pb, Pr, Rb, Sb, Sc, Se, Sm, Sn, Sr, Ta, Tb, Te, Th, Ti, Tl, Tm, U, V, W, Y, Yb, Zn, Zr, 41 element analysis: Al, As, B, Ba, Be, Bi, Ca, Cd, Co, Cr, Cs, Cu, Ga, Ge, Fe, Hf, Ir, K, Li, Mg, Mn, Mo, Na, Nb, Ni, Pb, Re, Sb, Sn, Sr, Ta, Te, Th, Ti, Tl, U, W, V, Y, Zn, Zr, 30 element analysis: Al, As, B, Ba, Be, Bi, Ca, Cd, Co, Cr, Cu, Ga, Ge, Fe, K, Li, Mg, Mn, Mo, Na, Ni, Pb, Sb, Sn, Sr, Ti, W, V, Zn, Zr, Custom 30-element package: You choose any 30 elements from our full 58-element list., Additional noble metals: Add the analysis of noble metals to any package from the options given below: Ag, Au, Pd, Pt, Rh, Ru, Ag, Au, Pt, Pd.. Additional elements are available upon request, Detection limits are in the ppm–ppb range (106–1010at/cm2), See this example report: VPD ICP-MS analysis, for more details. This measurement is primarily intended for 100, 150, 200, and 300 mm bare-silicon wafers, but we also offer ICP-MS analyses for other wafer sizes and thin films up to a few µm thickness. The most typically used instruments include the following: Perkin-Elmer NexION 350S ICP-MS, Perkin-Elmer Sciex ELAN 6100 DRC II ICP-MS, Thermo Fisher iCAP TQe ICP-MS, Finnigan element2 ICP-MS. Express turnaround (2 or 3 business days) can be arranged upon request for an additional charge. Contact us for more information and to request a quote.

Determination of particle contamination on wafers or thin films up to 300 mm in diameter using an optical particle counter in a class 10 (ISO Class 4) cleanroom. We have access to several instruments (KLA-Tencor Surfscan 6200, Candela CS10V, etc.), and upon request, two different instruments can be used to cross-verify particle counts. The results are reported as particle counts by size range, in both tabular and histogram format. Contamination maps of wafer surfaces are also provided. Please note that the best-case detection limit of 20 nm applies to latex particles on bare silicon wafers. The smallest detectable particle size is typically higher for thin films due to interference from the coating. When requesting an offer, please disclose the size and number of wafers, and let us know whether they are bare or coated. In case of coated wafers, please also disclose the composition and approximate thickness of the film.