Katherine Gallegos Rosas

In this analysis, the surface roughness value (RMS) of the sample is determined with atomic force microscopy (AFM), typically with the Bruker Dimension Icon as the instrument. Three measurement points from the sample are included in a typical analysis. The measurement area is 5 x 5 micrometers, if not otherwise agreed. In addition to the RMS value, a 2D image, a 3D image, and raw data will be included in the test report.

During this analysis, the surface of a smooth and hard sample is imaged with an atomic force microscope (AFM). Topological images are typically provided from three locations around the sample. The measurement area is 5 x 5 micrometers, if not otherwise agreed. Measurements are typically done using the following instrument: Bruker Dimension Icon.

Eddy current testing is a fast, non-destructive evaluation method for obtaining properties like sheet resistance, resistivity, and conductivity. It is an alternative to the traditional 4-point probe method and offers high accuracy without the influence of contact resistance. An alternating current that flows through the test probe's coils generates a primary magnetic field. When this probe is placed near a conductive material, circular electrical currents are induced within the material, called eddy currents. The induced eddy currents generate an opposing secondary magnetic field, which alters the coil's electrical impedance. This shift in electrical impedance is detected by the instrument and converted into a conductivity value. With the eddy current technique, it is possible to perform single-point measurements or high-resolution mapping across a wafer. Use the form below to ask our experts for more information or a quote for your project.

Electrochemical capacitance voltage (ECV) profiling is a destructive characterization technique used to measure doping profiles in semiconductor heterostructures. By bringing a liquid electrolyte into contact with the semiconductor sample, a junction analogous to a Schottky barrier is formed. This junction creates a depletion region, i.e., a region depleted of holes and electrons but with ionized charges and electrically active defects or traps. The depletion region acts as a dielectric exhibiting voltage-dependent capacitance. By performing capacitance-voltage measurements, carrier concentration can be calculated. Depth profiling is achieved by electrolytically etching the semiconductor. A typical measurement covers a 2 µm depth profile. Other depths in the range of 0.05 µm to 50 µm can be analyzed on request.