Laboratory testing services

Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA) measurement for determining the elemental concentrations of thin films. ToF-ERDA is capable of identifying all elements, including various hydrogen isotopes. It provides elemental depth profiles by determining the concentration of each element at different depths within a sample. Typically, the method achieves detection limits ranging from 0.1 to 0.5 atomic percent and depth resolution between 5 and 20 nm. It is suitable for analyzing films with thicknesses between 20 and 500 nm. For accurate measurements, the sample surface should be smooth, with a roughness of less than 10 nm. The method is inherently quantitative when analyzing thin films on typical substrates, such as silicon (Si), gallium nitride (GaN), silicon carbide (SiC), gallium arsenide (GaAs), or indium phosphide (InP). So, reference samples are not needed to obtain quantitative results. The technique is particularly useful when analyzing light elements due to its good detection limits. In addition to typical ToF-ERDA measurements, we also offer LI-ERDA (also referred to as Foil ERDA) for more precise determination of hydrogen isotopes. The detection limits with LI-ERDA are typically around 0.01 atomic percent, and depth resolutions of ~1nm can be achieved. LI-ERDA only allows detection of hydrogen isotopes.

Imaging of the sample using a scanning electron microscope (SEM) with energy-dispersive X-ray spectroscopy (EDX or EDS). Typically, several images are taken with varying magnifications to get a good overview of the sample. An EDX mapping, line scan, or point measurement is collected to measure the sample composition (elemental at.% or wt.%). Non-conductive samples can be prepared with a metallic coating. For cross-section measurement, additional preparation might be needed: FIB, BIB, or freeze fracturing.

Imaging of the sample using scanning electron microscopy (SEM). Typically, several images are taken with varying magnifications to get a good overview of the sample. Non-conductive samples can be prepared with a metallic coating to allow imaging. For cross-section measurement, additional preparation might be needed: FIB, BIB or freeze fracturing. If compositional analysis is also needed, please see the SEM-EDX measurement.

VPD ICP-MS allows the determination of trace metal contamination on the surface of wafers. The full surface of the wafer is scanned during the analysis. VPD ICP-MS is performed using acid to dissolve the top surface of the wafer before the determination of elemental concentrations with ICP-MS. Please note that lighter elements, such as H, C, N, O, and F, cannot be analyzed. We offer different analysis packages for a wide range of elements: 30 elements: Al, As, B, Ba, Be, Bi, Ca, Cd, Co, Cr, Cu, Ga, Ge, Fe, K, Li, Mg, Mn, Mo, Na, Ni, Pb, Sb, Sn, Sr, Ti, W, V, Zn, Zr, 41 elements: Al, As, B, Ba, Be, Bi, Ca, Cd, Co, Cr, Cs, Cu, Ga, Ge, Fe, Hf, Ir, K, Li, Mg, Mn, Mo, Na, Nb, Ni, Pb, Re, Sb, Sn, Sr, Ta, Te, Th, Ti, Tl, U, W, V, Y, Zn, Zr, Additional noble metals: Ag, Au, Pt, Pd, Additional elements are available upon request, Detection limits are in the ppm–ppb range (107–1010at/cm2). This measurement is primarily intended for 100, 150, 200, and 300 mm bare-silicon wafers, but we also offer ICP-MS analyses for other wafer sizes and thin films. The most typically used instruments include the following: Perkin-Elmer NexION 350S ICP-MS, Perkin-Elmer Sciex ELAN 6100 DRC II ICP-MS, Thermo Fisher iCAP TQe ICP-MS, Finnigan element2 ICP-MS. Contact us for more information and to request a quote.

X-Ray Reflectometry (XRR) analysis is used to measure the density (g/cm3), thickness (nm), and roughness (nm) of thin films. The method is applicable to the characterization of single- or multilayered thin films, as it provides information on the thickness and density of individual layers of the sample material as well as the roughness of the interphases. Greatest accuracy for XRR thickness measurements is generally achieved for samples containing 1-150 nm thick surface layers with under 5 nm RMS roughness. Thicker films and coatings with rougher surfaces can also be characterized, but the accuracy of thickness determination decreases as the thickness and roughness of the film or film stack increase. >150 mm wafers are typically cut to fit the sample holder. Please let us know if you need testing for larger wafers that cannot be cut into pieces. The available temperature range for XRR measurements is 25-1100 °C, and crystallinity can be studied as a function of temperature. The measurements can be performed under a normal atmosphere, inert gas, or vacuum. Measurements are typically performed using one of the following instruments: Rigaku SmartLab, Panalytical X'Pert Pro MRD, Bruker D8 Discover. Please let us know if you have a preference for a specific instrument.

In this analysis, the surface roughness value (RMS) of the sample is determined with atomic force microscopy (AFM), typically with the Bruker Dimension Icon as the instrument. Three measurement points from the sample are included in a typical analysis. The measurement area is 5 x 5 micrometers, if not otherwise agreed. In addition to the RMS value, a 2D image, a 3D image, and raw data will be included in the test report.

The combination of grazing incidence X-ray diffraction (GI-XRD) and X-ray reflectometry (XRR) analysis is used to determine the following properties of thin film samples: XRR density (g/cm3), thickness (nm),, roughness (nm). GI-XRD XRD spectrum and identification of the phase(s), Crystallinity, crystallite size, lattice parameters, and strain of the phase. NOTE: These parameters are determined if samples are highly crystalline. Determination may not succeed if crystallinity is insufficient.. Notes about suitable samples XRR - The method is applicable to the characterization of single- or multilayered thin films, as it provides information on the thickness and density of individual layers of the sample material as well as the roughness of the interphases. The greatest accuracy for XRR thickness measurements is generally achieved for samples containing 1-150 nm thick surface layers with under 5 nm RMS roughness. Thicker films and coatings with rougher surfaces can also be characterized but, the accuracy of thickness determination decreases as the thickness and roughness of the film or film stack increases. GI-XRD - the method is generally applicable for samples that are suitable for XRR. The only special criterion is crystallinity - the investigated phases must be crystalline to produce XRD data. Available conditions By default, the GI-XRD and XRR measurements are performed under ambient conditions, but temperatures from 25 to 1,100 °C can be used, and the properties studied as a function of temperature. Measurements can also be done under inert gas or vacuum if needed. Please contact our experts if you need XRR and/or GI-XRD measurements or if you need more information on the analysis or suitable samples.

Grazing incidence X-ray diffraction (GI-XRD) measurement for thin films and surface layers. The measurement provides the following information: XRD spectrum and identification of the phase(s), Crystallinity, crystallite size, lattice parameters, and strain of the phase. NOTE that these parameters are determined if the samples are highly crystalline. It may not be possible to determine them if the crystallinity is insufficient.. Best GI-XRD results are typically achieved for samples containing up to 300 nm thick surface layers with under 10 nm RMS roughness. Thicker films and coatings with rougher surfaces can also be characterized, but the quality of the data is generally lower for rough samples, and the sample properties below 300 nm depths are typically not reflected in the results. One of the following instruments is typically used to perform the measurements: Rigaku SmartLab, Panalytical X'Pert Pro MPD, Bruker D8 Discover, Malvern Empyrean. By default, the GI-XRD is conducted in ambient conditions, but temperatures of 25 to 1100 °C can be used to study crystallinity as a function of temperature. The measurements can also be performed under inert gas or vacuum if needed. Please contact our experts to discuss the available temperature and atmosphere combinations.

Imaging of the sample with transmission electron microscopy (TEM) and determination of the elemental composition of the sample using electron dispersive X-ray spectroscopy (EDX or EDS). Several images with varying magnifications are taken to get a good overview of the sample. An EDX mapping, line scan, or point measurement is collected to measure the sample composition (elemental at.% or wt.%). For solid samples, the analysis often requires FIB preparation, which is priced separately. HR-TEM can also be provided. Contact us for more details about the analysis options.

Imaging of the sample with transmission electron microscope (TEM). Typically, several images with varying magnifications are taken to get a good overview of the sample. TEM allows nm-resolution images. Solid samples often require FIB preparation before analysis. HR-TEM can also be provided. Contact us for more details.

Ellipsometry is an optical technique that characterizes polarized light reflected from a sample's surface. It can measure the thickness or the refractive index of a layer. Do not hesitate to contact our experts for more details.

In XPS depth profiling, ion gun etching cycles and XPS analysis cycles are alternated to obtain semi-quantitative information on the elemental composition (at.%) of the sample as a function of depth. The binding states of atoms can also be analyzed as a function of depth to determine the chemistry of the sample and its variations with depth. XPS depth profiling is a destructive technique with an analysis area diameter ranging from 10 µm to several 100 µm. Sputtering is done with an Ar-cluster GCIB ion beam or Ar monoatomic ions, and XPS measurements are typically performed using one of the following instruments: PHI Genesis, Thermo Fisher ESCALAB 250Xi, PHI Quantum 2000.

Secondary ion mass spectrometry (SIMS) is a highly sensitive elemental depth profiling method that can be used for a wide variety of solids to determine the presence of impurities or concentration of dopants. All elements from hydrogen to uranium can be detected with concentrations in the parts-per-billion (ppb) range. By using standards, SIMS allows for both qualitative and quantitative analysis. Depth profiling can be done from 10 nm down to a few µm thickness and needs to be done in electronegative or electropositive modes, depending on the analyzed elements. Do not hesitate to contact our expert for a quote tailored to your analysis project.

XPS is a semi-quantitative technique used to measure the elemental composition of material surfaces. In addition, it can also determine the binding state of the atoms. XPS is a surface-sensitive technique. Typical probing depth is 3-9 nm, and detection limits range roughly between 0.1 and 1 atomic %. XPS can measure elements from Li to U. The elemental composition is reported in at.% and measured on 1 area of a few 100 µm. Upon request, we can measure smaller areas or depth profiles, and a binding state determination can also be provided. Measurements are typically performed using one of the following instruments: PHI Genesis, Thermo Fisher ESCALAB 250Xi, PHI Quantum 2000. Synchrotron XPS is also available. Contact us for more information and a quote for your project.

Total reflection X-ray fluorescence (TXRF) measurement to determine elemental trace contamination on wafer surfaces. 49-300 individual spots are measured, and the elemental concentrations are given as visual heatmaps on the wafer surface, as well as numeric concentrations. Almost all elements between sodium (Na) and Uranium (U) can be included in the list of analyzed elements. Most typically, some or all of the following elements are included: Al, Mg, Na, Ag, Ar, Ba, Ca, Cd, Ce, Cl, Co, Cr, Cs, Cu, Dy, Er, Eu, Fe, Gd, Hf, Ho, I, In, K, La, Lu, Mn, Nd, Ni, P, Pd, Pm, Pr, Rh, S, Sb, Sc, Sm, Sn, Tb, Te, Ti, Tm, V, Xe, Yb, Zn, Ac, As, At, Au, Bi, Br, Fr, Ga, Ge, Hg, Ir, Kr, Mo, Nb, Os, Pa, Pb, Po, Pt, Ra, Rb, Re, Rn, Ru, Se, Sr, Ta, Tc, Th, Tl, U, W, Y, Zr. All typical coated and bare wafers (e.g., Si, SiC, GaAs, GaN, InP, etc.) and sizes up to 300 mm (12 inch) are suitable for the measurement. Detection limits vary between 109 - 1012 at/cm2. Transition metals have lower detection limits compared to alkaline and alkaline earth metals. Spatial resolution is between 5-15 mm, depending on wafer size and number of points measured. The Rigaku TXRF 310Fab is typically used as the instrument. Pricing depends on several factors, including the number of spots analyzed and wafers submitted together. Please contact us for a customized quote.

The focused ion beam (FIB) technique is used to prepare samples for electron microscopy. It allows very precise cutting of samples to observe them by TEM or SEM imaging. We are happy to provide a quote for FIB preparation on its own, as well as FIB-TEM or FIB-SEM analysis.

SAM is a non-destructive analysis technique used in failure analysis to obtain information on die-attach integrity, delamination, voids, cracks, and the effectiveness of bonding processes (including solder efficiency). Additionally, SAM can assess the quality of sealing, coating, flip-chip underfills, wafer-to-wafer bonding, and solder bump integrity. In addition to conventional C-SAM, we offer the possibility of analysis with Gigahertz SAM (GHz-SAM), which offers increased resolution. Maximum scan area: 300 mm x 300 mm – 350 mm x 350 mm for conventional SAM, 100 µm – 1500 µm for GHz-SAM., Transducer frequencies: 5 MHz - 1 GHz (different devices) with theoretical resolution ranging from 100 µm to ~1 µm.. Please note that the maximum penetration depth depends on the acoustic properties of your specific material and the acoustic impedance differences between material layers. Contact our experts through the form below to request a quote for your C-SAM analysis project.

During this analysis, the surface of a smooth and hard sample is imaged with an atomic force microscope (AFM). Topological images are typically provided from three locations around the sample. The measurement area is 5 x 5 micrometers, if not otherwise agreed. Measurements are typically done using the following instrument: Bruker Dimension Icon.

High-resolution mass spectrometry (HRMS) is an analytical technique for determining the exact molecular masses of various compounds. The high accuracy makes HRMS ideal for the identification of molecular structures, ranging from small organic molecules to large biological macromolecules. Sample requirements: Information regarding the solubility of the sample in common high-performance liquid chromatography (HPLC) solvents (e.g., H2O, methanol, acetonitrile) or other solvents should be provided., 0.1% formic acid is used as an additive in the test. It is essential to confirm the sample's stability in this acid., Providing the expected molecular weight of the analyte(s) and molecular structure of the sample as a ChemDraw file is beneficial.. Measurement details: Scans can be performed in both positive (+ve) and negative (-ve) ion modes., An ACQUITY RDa Detector is utilized for detection..

Nondestructive 3D analysis of internal structures by X-ray computed tomography. The method visualizes voids, cracks, density, and phase differences within solid structures. The method is most suitable for powdered materials, such as pharmaceutical and cosmetic ingredients. The resolution can go down to 2-3 µm for powders. Please contact us for more information about the analysis options for different materials and material dimensions.

Nano scratch test of thin film samples. Typical measurement includes an overview image of the scratch track (surface damage) and determination of critical load values.

Measurement of surface profile, roughness or edge sharpness by optical profilometry.

This analysis according to the IEC 60243-1 standard determines the dielectric strength of solid plastics by subjecting a flat sample plate to a gradually increasing voltage between two electrodes. The voltage at which the plastic loses its insulating properties is known as the breakdown voltage. The dielectric strength is calculated by dividing the breakdown voltage by the thickness of the sample and is typically expressed in kilovolts per millimeter (kV/mm). Samples are preconditioned at 23 °C and 50% RH for 24 hours before testing and are tested in a surrounding medium of thermostated insulating oil to prevent flashover. The analysis includes five tests at 23 °C. The dielectric strength is determined from the median of the test results. Five additional tests will be conducted if any single test result deviates by more than 15% from the median. The dielectric strength is then determined from the median of the 10 results. These additional tests do not affect the price of the analysis. Maximum dielectric strength 50 kV/mm. Analyses conducted at cryogenic and elevated temperatures (up to 250°C) are also available. Please contact us for a quote tailored to your project. Note that we also offer other tests to evaluate the electrical properties of plastics, including volume & surface resistivity tests and comparative tracking index (CTI) determination.

Glow discharge-optical emission spectroscopy (GD-OES) is a quantitative technique used to profile the elemental composition of a sample in depth. The technique is mainly used for quick depth profiling of thick materials, providing their elemental composition as a depth profile. It is commonly used to analyze inorganic materials and coatings, such as metal, glass, and ceramic coatings or multilayer stacks.

Magnetometry provides information on the magnetic properties of the sample material as a function of the magnetic field. A vibrating-sample magnetometer (VSM), also referred to as a Foner magnetometer, is used in the measurement. According to Faraday’s Law of Induction, a changing magnetic field will produce an electric field, which can be measured to obtain information about the magnetic field. Magnetometry is suitable for thin films, bulk materials, liquids, and powders. Some of the properties that VSM can measure include magnetic moment, coercivity, and hysteresis loops. Low-temperature VSM can also be used to confirm the Meissner effect in superconducting thin films, including those developed for quantum computing applications. Projects are priced on a case-by-case basis, with lower per-sample prices for large sample sets. Please contact us for a quote.

Particle size distribution (PSD) is determined from transmission electron microscopy (TEM) images. The method is most suitable for small particles of 50 nm or smaller. Depending on particle shapes, the method includes calculating the diameters or lengths and widths of particles. In addition to size, TEM provides qualitative information about the surface morphology of the particles. TEM is a good option for irregularly shaped and non-spherical particles such as fibers, rods, and crystals that cannot be characterized meaningfully with traditional methods, including laser diffraction (LD) and dynamic light scattering (DLS). As a result of the analysis, TEM images and the determined particle size distribution for diameter (or length and width) are delivered. Dry samples are suitable for TEM as is. If the particles are wet or dispersed in a solvent, the sample may be dried with a suitable sample preparation method before imaging.

Rutherford Backscattering Spectrometry (RBS) can be used to measure the composition of solid samples quantitatively at the surface as well as depth profiling. RBS is used for the analysis of heavy elements and can be combined with ToF-ERDA when lighter elements also need to be analyzed. Elements with similar mass can be difficult to differentiate.

Group delay dispersion (GDD) and group velocity dispersion (GVD) are critical parameters for understanding how the propagation time and speed of light pulses change with frequency or wavelength as they travel through transmitting media, such as glass optics, or interact within the layers of thin-film coatings. Group delay refers to the time delay experienced by light of various frequencies, while group velocity is the speed at which the envelope of a pulse propagates through a medium. GDD and GVD characterize the rate at which group delay and group velocity, respectively, vary with the frequency or wavelength of light. GDD and GVD are expressed in units of time squared, typically in femtoseconds squared (fs2). Both can be measured using a white light interferometer. The measurement conditions for which we can perform the test are outlined below. For a 1" sample Reflection optics AOI: 0° & 5-70°, Transmission AOI: 0-70°. For a 2" sample Reflection optics AOI: 5-70° (0° could be possible, discuss with expert), Transmission AOI: 0-70°. Spectral coverage: 400-1060 nm (VIS/NIR basic version), 250-1060 nm (UV/VIS/NIR version), 900-2400 nm (IR version). To carry out the testing, the following measurement details and sample information should be available: Sample matrix: Substrates, coating, etc. , Reflection/transmission angle of incidence: Reflection AOI of 45°, Transmission AOI of 45°, etc., Polarization: p, s, N/A, Working wavelength range, Measurement points: How many and where in the sample?, Expected GDD/GVD.

Hot-stage microscopy (HSM) analysis enables the direct visualization of materials under controlled temperature conditions. Capabilities include: Examining compound morphology and particle characteristics., Observing solid-solid transformations, melting/liquefaction, solidification, sublimation, and evaporation., Monitoring how different compounds interact, dissolve, or react with each other., Tracking crystal growth and growth rates., Utilizing the Kofler mixed fusion method for salt/co-crystal screening., Observing oxidation and other chemical reactions as they occur under heat.. The results will include microscope pictures and video showing the transitions during heating. Measurement specifications: Temperature range: 25 °C to 375 °C, Humidity control: 5–90% RH. Instrument details: The instrument set-up comprises a heating stage (hot stage) with a sample holder, coupled with a polarized-light microscope and a system that allows temperature measurements and video/picture recording.

The method is intended to determine the compatibility of devices and subassemblies to withstand moderately severe shocks. Testing conditions simulate real-world scenarios where the equipment might encounter sudden, forceful impacts. This is a destructive test intended for device qualification, carried out in accordance with JESD22-B110B. Example testing conditions: Pulse shape: saw-tooth curve , Acceleration: 100G , Duration: 2ms, The device is tested along 3 axes and subjected to one shock in both the positive and negative directions for each axis being tested, Service condition C.

The tests will be carried out following either standard EN 60068-2-1 (cold) or EN 60068-2-2 (hot), which establish procedures for evaluating the tolerance of components, equipment, or articles to cold and dry heat environments. The scope of these standards is limited to static temperature conditions during storage, transportation, or use. To assess a product’s response to temperature changes, the IEC 60068-2-14 standard is applicable. Example testing conditions: Temperature = -40°C or +45°C , Time = 400 minutes .

Determination of metal concentrations on semiconductors (coated or uncoated wafers) using LA-ICP-MS. The standard analysis package includes the quantification of the following elements: Ca, Cr, Cu, Co, Er, Fe, Ge, Pb, Mn, Mo, Ni, K, Na, Sn, Ti, Ta, Zn, Bi, Au, Sn, V, Sr, and Y. We also offer a 70-element package, where the following elements are quantified; Ag, Al, As, Au, B, Ba, Be, Bi, Br, Ca, Cd, Ce, Co, Cr, Cs, Cu, Dy, Er, Eu Fe, Ga, Gd, Ge, Hf, Hg, Ho, I, In, Ir, K, La, Li, Lu, Mg, Mn, Mo, Na, Nb, Nd, Ni, Os, P, Pb, Pd, Pr, Pt, Rb, Re, Rh, Ru, Sb, Sc, Se, Sm, Sn, Sr, Ta, Tb, Te, Th, Ti, Tl, Tm, U, V, W, Y, Yb, Zn, and Zr. Values will be reported in ppm (μg/g). Analysis of other elements outside of these packages may be possible. Contact us for details.

The EN 60068-2-6 standard provides a procedure for assessing the ability of components, equipment, and other articles to withstand specified severities of sinusoidal vibration. The testing process includes preparing and mounting the test sample similarly to its real-world use, setting up the vibration test system, which typically includes a vibration table, performing a predefined testing sequence, and monitoring the vibration response and critical behavior of the test sample. Example testing conditions: Acceleration: 5G (peak), Frequency: 5 Hz to 2,000 Hz , Measurement across 3 axes, 10 sweeps/axis.

This test is designed to evaluate a product's or component's ability to withstand dynamic loads without unacceptable degradation of functional and/or structural integrity when subjected to random vibration. Testing is carried out according to the EN 60068-2-64 standard. The test applies to specimens that may be subjected to vibration of a stochastic nature, resulting from transportation or operational environments, for example, in aircraft, space vehicles, and land vehicles. Example testing conditions: Acceleration: 5.04 Grms, Time: 8hrs/axis, 3 axes. Test conditions will affect pricing, so please specify them in detail when requesting a quote.

Auger Electron Spectroscopy (AES) is a surface-sensitive technique (3-9 nm) used for compositional analysis and depth profiling, providing data on the elemental composition in depth. Secondary electron images can also be provided. AES is a very useful technique to measure patterns since it has a beam size that can go down to a few nm.

Automated thermal desorption-gas chromatography-mass spectrometry (ATD-GC-MS) is a highly sensitive method for wafer surface organic contamination analysis, providing low detection limits and a wide range of organic contaminant analysis capabilities. The analysis can be performed following the SEMI MF 1982-1103 standard.