Semiconductor testing services

Imaging of the sample using a scanning electron microscope (SEM) with energy-dispersive X-ray spectroscopy (EDX or EDS). Typically, several images are taken with varying magnifications to get a good overview of the sample. An EDX mapping, line scan, or point measurement is collected to measure the sample composition (elemental at.% or wt.%). Non-conductive samples can be prepared with a metallic coating. For cross-section measurement, additional preparation might be needed: FIB, BIB, or freeze fracturing.

During this analysis, the surface of a smooth and hard sample is imaged with an atomic force microscope (AFM). Topological images are typically provided from three locations around the sample. The measurement area is 5 x 5 micrometers, if not otherwise agreed. Measurements are typically done using the following instrument: Bruker Dimension Icon.

Imaging of the sample with transmission electron microscope (TEM). Typically, several images with varying magnifications are taken to get a good overview of the sample. TEM allows nm-resolution images. Solid samples often require FIB preparation before analysis. HR-TEM can also be provided. Contact us for more details.

Imaging of the sample with transmission electron microscopy (TEM) and determination of the elemental composition of the sample using electron dispersive X-ray spectroscopy (EDX or EDS). Several images with varying magnifications are taken to get a good overview of the sample. An EDX mapping, line scan, or point measurement is collected to measure the sample composition (elemental at.% or wt.%). For solid samples, the analysis often requires FIB preparation, which is priced separately. HR-TEM can also be provided. Contact us for more details about the analysis options.

Imaging of the sample using scanning electron microscopy (SEM). Typically, several images are taken with varying magnifications to get a good overview of the sample. Non-conductive samples can be prepared with a metallic coating to allow imaging. For cross-section measurement, additional preparation might be needed: FIB, BIB or freeze fracturing. If compositional analysis is also needed, please see the SEM-EDX measurement.

The focused ion beam (FIB) technique is used to prepare samples for electron microscopy. It allows very precise cutting of samples to observe them by TEM or SEM imaging. We are happy to provide a quote for FIB preparation on its own, as well as FIB-TEM or FIB-SEM analysis.

SAM is a non-destructive analysis technique used in failure analysis to obtain information on die-attach integrity, delamination, voids, cracks, and the effectiveness of bonding processes (including solder efficiency). Additionally, SAM can assess the quality of sealing, coating, flip-chip underfills, wafer-to-wafer bonding, and solder bump integrity. In addition to conventional C-SAM, we offer the possibility of analysis with Gigahertz SAM (GHz-SAM), which offers increased resolution. Maximum scan area: 300 mm x 300 mm – 350 mm x 350 mm for conventional SAM, 100 µm – 1500 µm for GHz-SAM., Transducer frequencies: 5 MHz - 1 GHz (different devices) with theoretical resolution ranging from 100 µm to ~1 µm.. Please note that the maximum penetration depth depends on the acoustic properties of your specific material and the acoustic impedance differences between material layers. Contact our experts through the form below to request a quote for your C-SAM analysis project.

Nondestructive 3D analysis of internal structures by X-ray computed tomography. The method visualizes voids, cracks, density, and phase differences within solid structures. The method is most suitable for powdered materials, such as pharmaceutical and cosmetic ingredients. The resolution can go down to 2-3 µm for powders. Please contact us for more information about the analysis options for different materials and material dimensions.

In this analysis, the surface roughness value (RMS) of the sample is determined with atomic force microscopy (AFM), typically with the Bruker Dimension Icon as the instrument. Three measurement points from the sample are included in a typical analysis. The measurement area is 5 x 5 micrometers, if not otherwise agreed. In addition to the RMS value, a 2D image, a 3D image, and raw data will be included in the test report.

X-Ray Reflectometry (XRR) analysis is used to measure the density (g/cm3), thickness (nm), and roughness (nm) of thin films. The method is applicable to the characterization of single- or multilayered thin films, as it provides information on the thickness and density of individual layers of the sample material as well as the roughness of the interphases. Greatest accuracy for XRR thickness measurements is generally achieved for samples containing 1-150 nm thick surface layers with under 5 nm RMS roughness. Thicker films and coatings with rougher surfaces can also be characterized, but the accuracy of thickness determination decreases as the thickness and roughness of the film or film stack increase. >150 mm wafers are typically cut to fit the sample holder. Please let us know if you need testing for larger wafers that cannot be cut into pieces. The available temperature range for XRR measurements is 25-1100 °C, and crystallinity can be studied as a function of temperature. The measurements can be performed under a normal atmosphere, inert gas, or vacuum. Measurements are typically performed using one of the following instruments: Rigaku SmartLab, Panalytical X'Pert Pro MRD, Bruker D8 Discover. Please let us know if you have a preference for a specific instrument.

Grazing incidence X-ray diffraction (GI-XRD) measurement for thin films and surface layers. The measurement provides the following information: XRD spectrum and identification of the phase(s), Crystallinity, crystallite size, lattice parameters, and strain of the phase. NOTE that these parameters are determined if the samples are highly crystalline. It may not be possible to determine them if the crystallinity is insufficient.. Best GI-XRD results are typically achieved for samples containing up to 300 nm thick surface layers with under 10 nm RMS roughness. Thicker films and coatings with rougher surfaces can also be characterized, but the quality of the data is generally lower for rough samples, and the sample properties below 300 nm depths are typically not reflected in the results. One of the following instruments is typically used to perform the measurements: Rigaku SmartLab, Panalytical X'Pert Pro MPD, Bruker D8 Discover, Malvern Empyrean. By default, the GI-XRD is conducted in ambient conditions, but temperatures of 25 to 1100 °C can be used to study crystallinity as a function of temperature. The measurements can also be performed under inert gas or vacuum if needed. Please contact our experts to discuss the available temperature and atmosphere combinations.

Ellipsometry is an optical technique that characterizes polarized light reflected from a sample's surface. It can measure the thickness or the refractive index of a layer. Do not hesitate to contact our experts for more details.