Thin film & wafer analysis

VPD ICP-MS allows the determination of trace metal contamination on the surface of wafers. The full surface of the wafer is scanned during the analysis, unless edge exclusion (2 mm, 5 mm, etc.) is requested. VPD ICP-MS is performed using acid to dissolve the top surface of the wafer before the determination of elemental concentrations with ICP-MS. Please note that lighter elements, such as H, C, N, O, and F, cannot be analyzed. We offer different analysis packages for a wide range of elements: 58 element analysis: Al, As, B, Ba, Be, Bi, Ca, Cd, Ce, Co, Cr, Cs, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Hg, Ho, In, K, La, Li, Lu, Mg, Mn, Mo, Na, Nb, Nd, Ni, Pb, Pr, Rb, Sb, Sc, Se, Sm, Sn, Sr, Ta, Tb, Te, Th, Ti, Tl, Tm, U, V, W, Y, Yb, Zn, Zr, 41 element analysis: Al, As, B, Ba, Be, Bi, Ca, Cd, Co, Cr, Cs, Cu, Ga, Ge, Fe, Hf, Ir, K, Li, Mg, Mn, Mo, Na, Nb, Ni, Pb, Re, Sb, Sn, Sr, Ta, Te, Th, Ti, Tl, U, W, V, Y, Zn, Zr, 30 element analysis: Al, As, B, Ba, Be, Bi, Ca, Cd, Co, Cr, Cu, Ga, Ge, Fe, K, Li, Mg, Mn, Mo, Na, Ni, Pb, Sb, Sn, Sr, Ti, W, V, Zn, Zr, Custom 30-element package: You choose any 30 elements from our full 58-element list., Additional noble metals: Add the analysis of noble metals to any package from the options given below: Ag, Au, Pd, Pt, Rh, Ru, Ag, Au, Pt, Pd.. Additional elements are available upon request, Detection limits are in the ppm–ppb range (106–1010at/cm2). This measurement is primarily intended for 100, 150, 200, and 300 mm bare-silicon wafers, but we also offer ICP-MS analyses for other wafer sizes and thin films up to a few µm thickness. The most typically used instruments include the following: Perkin-Elmer NexION 350S ICP-MS, Perkin-Elmer Sciex ELAN 6100 DRC II ICP-MS, Thermo Fisher iCAP TQe ICP-MS, Finnigan element2 ICP-MS. Express turnaround (1–3 business days) can be arranged upon request for an additional charge. Contact us for more information and to request a quote.

Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA) measurement for determining the elemental concentrations of thin films. ToF-ERDA is capable of identifying all elements, including various hydrogen isotopes. It provides elemental depth profiles by determining the concentration of each element at different depths within a sample. Typically, the method achieves detection limits ranging from 0.1 to 0.5 atomic percent and depth resolution between 5 and 20 nm. It is suitable for analyzing films with thicknesses between 20 and 500 nm. For accurate measurements, the sample surface should be smooth, with a roughness of less than 10 nm. The method is inherently quantitative when analyzing thin films on typical substrates, such as silicon (Si), gallium nitride (GaN), silicon carbide (SiC), gallium arsenide (GaAs), or indium phosphide (InP). So, reference samples are not needed to obtain quantitative results. The technique is particularly useful when analyzing light elements due to its good detection limits. In addition to typical ToF-ERDA measurements, we also offer LI-ERDA (also referred to as Foil ERDA) for more precise determination of hydrogen isotopes. The detection limits with LI-ERDA are typically around 0.01 atomic percent, and depth resolutions of ~1nm can be achieved. LI-ERDA only allows detection of hydrogen isotopes.

Time of flight - secondary ion mass spectrometry (ToF-SIMS) is a highly sensitive analytical technique that is used for elemental and molecular analysis, as well as elemental mapping of solid samples. The technique is primarily used for detailed surface analysis of solid materials, whether organic, inorganic, polymeric, or biological. It can also be used as a depth profiling method with dual ion beams to check for impurities or dopants. All elements from hydrogen to uranium can be detected with concentrations in the parts-per-billion (ppb) range. Compared to SIMS, ToF-SIMS provides only qualitative results.

Secondary ion mass spectrometry (SIMS) is a highly sensitive elemental depth profiling method that can be used for a wide variety of solids to determine the presence of impurities or concentration of dopants. All elements from hydrogen to uranium can be detected with concentrations in the parts-per-billion (ppb) range. By using standards, SIMS allows for both qualitative and quantitative analysis. Depth profiling can be done from 10 nm down to a few µm thickness and needs to be done in electronegative or electropositive modes, depending on the analyzed elements. Do not hesitate to contact our expert for a quote tailored to your analysis project.

Total reflection X-ray fluorescence (TXRF) measurement to determine elemental trace contamination on wafer surfaces. 49-277 individual spots are measured, and the elemental concentrations are given as visual heatmaps on the wafer surface, as well as numeric concentrations. Almost all elements between sodium (Na) and Uranium (U) can be included in the list of analyzed elements. Most typically, some or all of the following elements are included: Al, Mg, Na, Ag, Ar, Ba, Ca, Cd, Ce, Cl, Co, Cr, Cs, Cu, Dy, Er, Eu, Fe, Gd, Hf, Ho, I, In, K, La, Lu, Mn, Nd, Ni, P, Pd, Pm, Pr, Rh, S, Sb, Sc, Sm, Sn, Tb, Te, Ti, Tm, V, Xe, Yb, Zn, Ac, As, At, Au, Bi, Br, Fr, Ga, Ge, Hg, Ir, Kr, Mo, Nb, Os, Pa, Pb, Po, Pt, Ra, Rb, Re, Rn, Ru, Se, Sr, Ta, Tc, Th, Tl, U, W, Y, Zr. All typical coated and bare wafers (e.g., Si, SiC, GaAs, GaN, InP, etc.) and sizes up to 300 mm (12 inch) are suitable for the measurement. Detection limits vary between 109 - 1012 at/cm2. Transition metals have lower detection limits compared to alkaline and alkaline earth metals. Spatial resolution is between 5-15 mm, depending on wafer size and number of points measured. The Rigaku TXRF 310Fab is typically used as the instrument. Pricing depends on several factors, including the number of spots analyzed and wafers submitted together. Please contact us for a customized quote.

XPS is a semi-quantitative technique used to measure the elemental composition of material surfaces. In addition, it can also determine the binding state of the atoms. XPS is a surface-sensitive technique. Typical probing depth is 3-9 nm, and detection limits range roughly between 0.1 and 1 atomic %. XPS can measure elements from Li to U. The elemental composition is reported in at.% and measured on 1 area of a few 100 µm. Upon request, we can measure smaller areas or depth profiles, and a binding state determination can also be provided. Measurements are typically performed using one of the following instruments: PHI Genesis, Thermo Fisher ESCALAB 250Xi, PHI Quantum 2000. Synchrotron XPS is also available. Contact us for more information and a quote for your project.