Thin film analysis & characterization services

Measurlabs offers a wide selection of analysis techniques for characterizing the physical properties and chemical composition of thin films and wafers. Testing is key to optimizing the performance and durability of products that rely on thin films, such as solar cells, MEMS, and optical coatings.
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Compositional analysis

Even small amounts of impurities may compromise the functionality of thin films, making detailed compositional analysis crucial. Some of the techniques we offer for determining film composition and identifying contaminants include the following:

  • VPD-ICP-MS for ppm to ppb level analysis of metallic trace contaminants on silicon wafers and thin films.

  • LA-ICP-MS for quantitative multi-element analysis with a 0.05 ppm detection limit.

  • ToF-ERDA for measuring the composition of films with a detection limit of 0.1 to 0.5 at.%. The method can detect all elements and distinguish between hydrogen isotopes.

  • SIMS and ToF-SIMS for ppm to ppb level impurity and dopant determination, either on the surface of the film or as a depth profile.

  • TXRF for mapping trace contaminants on the surfaces of full wafers.

Methods like XPS can be used for further analysis of the chemical environment and bonding of each element. We also offer crystallinity analyses with techniques including XRD and EBSD.

VPD ICP-MS

VPD ICP-MS allows the determination of trace metal contamination on the surface of wafers. The full surface of the wafer is scanned during the analysis. VPD ICP-MS is performed using acid to dissolve the top surface of the wafer before the determination of elemental concentrations with ICP-MS. Please note that lighter elements, such as H, C, N, O, and F, cannot be analyzed. We offer different analysis packages for a wide range of elements: 30 elements: Al, As, B, Ba, Be, Bi, Ca, Cd, Co, Cr, Cu, Ga, Ge, Fe, K, Li, Mg, Mn, Mo, Na, Ni, Pb, Sb, Sn, Sr, Ti, W, V, Zn, Zr, 41 elements: Al, As, B, Ba, Be, Bi, Ca, Cd, Co, Cr, Cs, Cu, Ga, Ge, Fe, Hf, Ir, K, Li, Mg, Mn, Mo, Na, Nb, Ni, Pb, Re, Sb, Sn, Sr, Ta, Te, Th, Ti, Tl, U, W, V, Y, Zn, Zr, Additional noble metals: Ag, Au, Pt, Pd, Additional elements are available upon request, Detection limits are in the ppm–ppb range (107–1010at/cm2). This measurement is primarily intended for 100, 150, 200, and 300 mm bare-silicon wafers, but we also offer ICP-MS analyses for other wafer sizes and thin films. The most typically used instruments include the following: Perkin-Elmer NexION 350S ICP-MS, Perkin-Elmer Sciex ELAN 6100 DRC II ICP-MS, Thermo Fisher iCAP TQe ICP-MS, Finnigan element2 ICP-MS. Contact us for more information and to request a quote.
378–870 €
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ToF-ERDA measurement

Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA) measurement for determining the elemental concentrations of thin films. ToF-ERDA is capable of identifying all elements, including various hydrogen isotopes. It provides elemental depth profiles by determining the concentration of each element at different depths within a sample. Typically, the method achieves detection limits ranging from 0.1 to 0.5 atomic percent and depth resolution between 5 and 20 nm. It is suitable for analyzing films with thicknesses between 20 and 500 nm. For accurate measurements, the sample surface should be smooth, with a roughness of less than 10 nm. The method is inherently quantitative when analyzing thin films on typical substrates, such as silicon (Si), gallium nitride (GaN), silicon carbide (SiC), gallium arsenide (GaAs), or indium phosphide (InP). So, reference samples are not needed to obtain quantitative results. The technique is particularly useful when analyzing light elements due to its good detection limits. In addition to typical ToF-ERDA measurements, we also offer LI-ERDA (also referred to as Foil ERDA) for more precise determination of hydrogen isotopes. The detection limits with LI-ERDA are typically around 0.01 atomic percent, and depth resolutions of ~1nm can be achieved. LI-ERDA only allows detection of hydrogen isotopes.
499–569 €
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Elemental analysis of solid and liquid samples with XRF

DIN 51418-1-08, EN 15309
XRF is a quantitative and qualitative method that can be used to analyze solid and liquid materials. This method is intended for a standard screening of homogeneous materials that do not require special sample preparation, precautions, or have any other special requirements. Wavelength-dispersive XRF (WDXRF) is used to perform the measurements unless energy-dispersive XRF (EDXRF) is specifically requested.
189–299 €
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ToF-SIMS measurement

Time of flight - secondary ion mass spectrometry (ToF-SIMS) is a highly sensitive analytical technique that is used for elemental and molecular analysis, as well as elemental mapping of solid samples. The technique is primarily used for detailed surface analysis of solid materials, whether organic, inorganic, polymeric, or biological. It can also be used as a depth profiling method with dual ion beams to check for impurities or dopants. All elements from hydrogen to uranium can be detected with concentrations in the parts-per-billion (ppb) range. Compared to SIMS, ToF-SIMS provides only qualitative results.
499–1,499 €
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SIMS measurement

Secondary ion mass spectrometry (SIMS) is a highly sensitive elemental depth profiling method that can be used for a wide variety of solids to determine the presence of impurities or concentration of dopants. All elements from hydrogen to uranium can be detected with concentrations in the parts-per-billion (ppb) range. By using standards, SIMS allows for both qualitative and quantitative analysis. Depth profiling can be done from 10 nm down to a few µm thickness and needs to be done in electronegative or electropositive modes, depending on the analyzed elements. Do not hesitate to contact our expert for a quote tailored to your analysis project.
496–2,499 €
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TXRF measurement

Total reflection X-ray fluorescence (TXRF) measurement to determine elemental trace contamination on wafer surfaces. 49-300 individual spots are measured, and the elemental concentrations are given as visual heatmaps on the wafer surface, as well as numeric concentrations. Almost all elements between sodium (Na) and Uranium (U) can be included in the list of analyzed elements. Most typically, some or all of the following elements are included: Al, Mg, Na, Ag, Ar, Ba, Ca, Cd, Ce, Cl, Co, Cr, Cs, Cu, Dy, Er, Eu, Fe, Gd, Hf, Ho, I, In, K, La, Lu, Mn, Nd, Ni, P, Pd, Pm, Pr, Rh, S, Sb, Sc, Sm, Sn, Tb, Te, Ti, Tm, V, Xe, Yb, Zn, Ac, As, At, Au, Bi, Br, Fr, Ga, Ge, Hg, Ir, Kr, Mo, Nb, Os, Pa, Pb, Po, Pt, Ra, Rb, Re, Rn, Ru, Se, Sr, Ta, Tc, Th, Tl, U, W, Y, Zr. All typical coated and bare wafers (e.g., Si, SiC, GaAs, GaN, InP, etc.) and sizes up to 300 mm (12 inch) are suitable for the measurement. Detection limits vary between 109 - 1012 at/cm2. Transition metals have lower detection limits compared to alkaline and alkaline earth metals. Spatial resolution is between 5-15 mm, depending on wafer size and number of points measured. The Rigaku TXRF 310Fab is typically used as the instrument. Pricing depends on several factors, including the number of spots analyzed and wafers submitted together. Please contact us for a customized quote.
2,053–8,239 €
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X-ray photoelectron spectroscopy (XPS)

XPS is a semi-quantitative technique used to measure the elemental composition of material surfaces. In addition, it can also determine the binding state of the atoms. XPS is a surface-sensitive technique. Typical probing depth is 3-9 nm, and detection limits range roughly between 0.1 and 1 atomic %. XPS can measure elements from Li to U. The elemental composition is reported in at.% and measured on 1 area of a few 100 µm. Upon request, we can measure smaller areas or depth profiles, and a binding state determination can also be provided. Measurements are typically performed using one of the following instruments: PHI Genesis, Thermo Fisher ESCALAB 250Xi, PHI Quantum 2000. Synchrotron XPS is also available. Contact us for more information and a quote for your project.
438–960 €
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Prices excluding VAT.

GI-XRD

Thickness and roughness determination

The thickness and roughness of thin films influence electrical and optical properties, adhesion, and particle trapping, among other properties. The following are just some of the techniques we offer for the physical characterization of films:

  • AFM for roughness analysis and imaging of extremely smooth, polished surfaces.

  • XRR for non-contact thickness, density, and roughness analysis of individual films and film stacks. When combined with GIXRD, information on the crystal structure will also be obtained.

  • Ellipsometry for measuring the thickness and refractive index of transparent and semi-transparent films and coatings.

  • Cross-sectional TEM and SEM for imaging thin film cross-sections to analyze thickness and morphology. When combined with an EDX detector, the elemental composition can also be determined.

You can find more information about the measurements through the icons below. Alternatively, you can contact our experts to discuss the technique or combination of techniques most suitable for analyzing your films or wafers.

AFM surface roughness measurement

In this analysis, the surface roughness value (RMS) of the sample is determined with atomic force microscopy (AFM), typically with the Bruker Dimension Icon as the instrument. Three measurement points from the sample are included in a typical analysis. The measurement area is 5 x 5 micrometers, if not otherwise agreed. In addition to the RMS value, a 2D image, a 3D image, and raw data will be included in the test report.
220–349 €
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XRR of thin films or coatings

X-Ray Reflectometry (XRR) analysis is used to measure the density (g/cm3), thickness (nm), and roughness (nm) of thin films. The method is applicable to the characterization of single- or multilayered thin films, as it provides information on the thickness and density of individual layers of the sample material as well as the roughness of the interphases. Greatest accuracy for XRR thickness measurements is generally achieved for samples containing 1-150 nm thick surface layers with under 5 nm RMS roughness. Thicker films and coatings with rougher surfaces can also be characterized, but the accuracy of thickness determination decreases as the thickness and roughness of the film or film stack increase. >150 mm wafers are typically cut to fit the sample holder. Please let us know if you need testing for larger wafers that cannot be cut into pieces. The available temperature range for XRR measurements is 25-1100 °C, and crystallinity can be studied as a function of temperature. The measurements can be performed under a normal atmosphere, inert gas, or vacuum. Measurements are typically performed using one of the following instruments: Rigaku SmartLab, Panalytical X'Pert Pro MRD, Bruker D8 Discover. Please let us know if you have a preference for a specific instrument.
183–271 €
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XRR + GI-XRD of thin films

The combination of grazing incidence X-ray diffraction (GI-XRD) and X-ray reflectometry (XRR) analysis is used to determine the following properties of thin film samples: XRR density (g/cm3), thickness (nm),, roughness (nm). GI-XRD XRD spectrum and identification of the phase(s), Crystallinity, crystallite size, lattice parameters, and strain of the phase. NOTE: These parameters are determined if samples are highly crystalline. Determination may not succeed if crystallinity is insufficient.. Notes about suitable samples XRR - The method is applicable to the characterization of single- or multilayered thin films, as it provides information on the thickness and density of individual layers of the sample material as well as the roughness of the interphases. The greatest accuracy for XRR thickness measurements is generally achieved for samples containing 1-150 nm thick surface layers with under 5 nm RMS roughness. Thicker films and coatings with rougher surfaces can also be characterized but, the accuracy of thickness determination decreases as the thickness and roughness of the film or film stack increases. GI-XRD - the method is generally applicable for samples that are suitable for XRR. The only special criterion is crystallinity - the investigated phases must be crystalline to produce XRD data. Available conditions By default, the GI-XRD and XRR measurements are performed under ambient conditions, but temperatures from 25 to 1,100 °C can be used, and the properties studied as a function of temperature. Measurements can also be done under inert gas or vacuum if needed. Please contact our experts if you need XRR and/or GI-XRD measurements or if you need more information on the analysis or suitable samples.
349–499 €
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Ellipsometry measurement

Ellipsometry is an optical technique that characterizes polarized light reflected from a sample's surface. It can measure the thickness or the refractive index of a layer. Do not hesitate to contact our experts for more details.
229–359 €
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Prices excluding VAT.

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