VPD ICP-MS
VPD ICP-MS allows the determination of trace metal contamination on the surface of wafers. The full surface of the wafer is scanned during the analysis.
VPD ICP-MS is performed using acid to dissolve the top surface of the wafer before the determination of elemental concentrations with ICP-MS. Please note that lighter elements, such as H, C, N, O, and F, cannot be analyzed.
We offer analysis packages for a wide range of elements and can also provide analysis for noble metals.
This measurement is meant for 100, 150, 200, and 300 mm bare-silicon wafers.
Contact us for more information or to request a quote for other wafer sizes or thin film ICP-MS testing.
Detection limit: ppm - ppb (107-109at/cm2)
More information about the method:
Vapour phase decomposition ICP-MS- Suitable sample matrices
- Thin films, coatings, silicon wafers
- Required sample quantity
- Full wafer
- Typical turnaround time
- 2 – 3 weeks after receiving the samples
- Available quality systems
- Measurlabs validated method
- Device types
- Method expert
Semiconductors
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