TXRF measurement

Total reflection X-ray fluorescence (TXRF) measurement to determine elemental trace contamination on wafer surfaces.

49-300 individual spots are measured, and the elemental concentrations are given as visual heatmaps on the wafer surface, as well as numeric concentrations.

Almost all elements between sodium (Na) and Uranium (U) can be included in the list of analyzed elements. Most typically, some or all of the following elements are included: Al, Mg, Na, Ag, Ar, Ba, Ca, Cd, Ce, Cl, Co, Cr, Cs, Cu, Dy, Er, Eu, Fe, Gd, Hf, Ho, I, In, K, La, Lu, Mn, Nd, Ni, P, Pd, Pm, Pr, Rh, S, Sb, Sc, Sm, Sn, Tb, Te, Ti, Tm, V, Xe, Yb, Zn, Ac, As, At, Au, Bi, Br, Fr, Ga, Ge, Hg, Ir, Kr, Mo, Nb, Os, Pa, Pb, Po, Pt, Ra, Rb, Re, Rn, Ru, Se, Sr, Ta, Tc, Th, Tl, U, W, Y, Zr.

All typical coated and bare wafers (e.g., Si, SiC, GaAs, GaN, InP, etc.) and sizes up to 300 mm (12 inch) are suitable for the measurement.

Detection limits vary between 10⁹ - 10¹² at/cm². Transition metals have lower detection limits compared to alkaline and alkaline earth metals.

Spatial resolution is between 5-15 mm, depending on wafer size and number of points measured.

The Rigaku TXRF 310Fab is typically used as the instrument.

Pricing depends on several factors, including the number of spots analyzed and wafers submitted together. Please contact us for a customized quote.