Secondary ion mass spectrometry (SIMS)
Secondary ion mass spectrometry (SIMS) is a highly sensitive elemental depth profiling method that can be used for a wide variety of solids to determine the presence of impurities or concentration of dopants.
All elements from hydrogen to uranium can be detected with concentrations in the parts-per-billion (ppb) range. By using standards, SIMS allows for both qualitative and quantitative analysis.
Depth profiling can be done from 10 nm down to a few µm thickness and needs to be done in electronegative or electropositive modes depending on the analyzed elements.
Do not hesitate to contact our expert for a quote!
More information about the method:
Secondary ion mass spectrometry (SIMS)- Suitable sample matrices
- Solids, thin films, bulk materials
- Required sample quantity
- 1x1 cm
- Typical turnaround time
- 2 – 3 weeks after receiving the samples
- Detection limit
- Down to ppm - ppb
- Available quality systems
- Measurlabs validated method
- Device types
- Method expert
Semiconductors
Compositional analysisQuestions? We're happy to help.
Questions? We're happy to help.
Ask for an offer
Fill in the form, and we'll reply in one business day.
Have questions or need help? Email us at info@measurlabs.com or call our sales team.