Superconductor testing

This analysis, performed according to the IEC 60243-1 or ASTM D149 standards, determines the dielectric strength of solid plastics by subjecting a flat sample plate to a gradually increasing voltage between two electrodes. The voltage at which the plastic loses its insulating properties is known as the breakdown voltage. The dielectric strength is calculated by dividing the breakdown voltage by the thickness of the sample and is typically expressed in kilovolts per millimeter (kV/mm). Samples are preconditioned at 23 °C and 50% RH for 24 hours before testing and are tested in a surrounding medium of thermostated insulating oil to prevent flashover. Typical room-temperature analysis includes five tests at 23 °C. The dielectric strength is determined from the median of the test results. Five additional tests will be conducted if any single test result deviates by more than 15% from the median. The dielectric strength is then determined from the median of the 10 results. These additional tests do not affect the price of the analysis. Maximum dielectric strength 50 kV/mm. Cryogenic and high-temperature analysis options (up to 250 °C) are also available. Please contact us for a quote tailored to your project. Note that we also offer other tests to evaluate the electrical properties of plastics, including volume & surface resistivity and comparative tracking index (CTI) determination.

X-Ray Reflectometry (XRR) analysis is used to measure the density (g/cm3), thickness (nm), and roughness (nm) of thin films. The method is applicable to the characterization of single- or multilayered thin films, as it provides information on the thickness and density of individual layers of the sample material as well as the roughness of the interphases. Greatest accuracy for XRR thickness measurements is generally achieved for samples containing 1-150 nm thick surface layers with under 5 nm RMS roughness. Thicker films and coatings with rougher surfaces can also be characterized, but the accuracy of thickness determination decreases as the thickness and roughness of the film or film stack increase. >150 mm wafers are typically cut to fit the sample holder. Please let us know if you need testing for larger wafers that cannot be cut into pieces. The available temperature range for XRR measurements is 25-1100 °C, and crystallinity can be studied as a function of temperature. The measurements can be performed under a normal atmosphere, inert gas, or vacuum. Measurements are typically performed using one of the following instruments: Rigaku SmartLab, Panalytical X'Pert Pro MRD, Bruker D8 Discover. Please let us know if you have a preference for a specific instrument.

During this analysis, the surface of a smooth and hard sample is imaged with an atomic force microscope (AFM). Topological images are typically provided from three locations around the sample. The measurement area is 5 x 5 micrometers, if not otherwise agreed. Measurements are typically done using the following instrument: Bruker Dimension Icon.

We have various testing services available for ultrapure water. Pricing depends on the selected parameters and the number of samples. Please contact Measurlabs to get an offer. Note that we will provide suitable shipping containers based on the analyses that are ordered. Trace elements by ICP-MS For the determination of elemental impurities, we offer a basic 36-element and an extended 67-element package. The basic package includes the following 36 elements: Li, Be, B, Na, Mg, Al, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Sr, Zr, Nb, Mo, Ag, Cd, Sn, Sb, Ba, Ta, W, Pt, Au, Tl, Pb, and Bi. The extended analysis includes the following elements in addition to the basic package: Ce, Cs, Dy, Er, Eu, Gd, Hf, Ho, In, Ir, La, Lu, Hg, Nd, Os, Pd, Pr, Re, Rh, Rb, Ru, Sm, Sc, Se, Te, Tb, Th, Tm, U, Yb, and Y. Reporting limits depend on the element and specific sample matrix, but typically vary between 0.001 ppb and 0.6 ppb. For this analysis, samples must be delivered in Teflon containers. Hardness Hardness value can be calculated based on the ICP-MS results. Silicon and silica (Si, SiO2) Our service catalog includes the determination of total, dissolved, and colloidal silica (SiO2). Total silicon is analyzed using the ICP-OES technique, and dissolved silicon by UV-VIS (molybdenum heteropoly blue method). Colloidal silica is calculated as the difference between total silica and dissolved silica. Total organic and inorganic carbon (TOC and TIC) We offer TOC determination for ultrapure water samples with a 5 ppb quantification limit. For this analysis, samples must be delivered in certified 40 ml TOC vials. Total inorganic carbon (TIC) analysis can also be performed using a TOC analyzer. Anions by ion chromatography (IC) For anions, we have a basic package and a separate package for organic anions. The basic package includes the following anions: bromide(Br⁻), chloride (Cl⁻), fluoride (F⁻), nitrate (NO₃⁻), nitrite (NO₂⁻), phosphate (PO₄³⁻), and sulfate (SO₄²⁻). Analysis of organic anions includes: acetate, formate, glycolate, propionate, and butyrate. Reporting limits depend on the anion and sample matrix, but typically vary between 0.02 and 1 ppb for basic anions and are around 25 ppb for organic anions. For this analysis, samples must be delivered in HDPE bottles. Cations by ion chromatography (IC) The analysis package for cations includes the determination of the following cations: ammonium (NH4+), calcium (Ca2+), lithium (Li+), magnesium (Mg2+), potassium (K+), and sodium (Na+). Reporting limits typically vary between 2 ppb and 5 ppb. Samples must be delivered in HDPE bottles. PFAS compounds (24 compounds) Analysis includes PFOS, PFOA, PFNA, PFHxS, and 20 other selected PFAS compounds. The complete list of compounds can be provided upon request. The reporting limit is typically 1 ng/L. The sample must be delivered in a plastic PFAS-free bottle, preferably made from HDPE.

Rutherford Backscattering Spectrometry (RBS) can be used to measure the composition of solid samples quantitatively at the surface as well as depth profiling. RBS is used for the analysis of heavy elements and can be combined with ToF-ERDA when lighter elements also need to be analyzed. Elements with similar mass can be difficult to differentiate.

VPD ICP-MS allows the determination of trace metal contamination on the surface of wafers. The full surface of the wafer is scanned during the analysis, unless edge exclusion (2 mm, 5 mm, etc.) is requested. VPD ICP-MS is performed using acid to dissolve the top surface of the wafer before the determination of elemental concentrations with ICP-MS. Please note that lighter elements, such as H, C, N, O, and F, cannot be analyzed. We offer different analysis packages for a wide range of elements: 58 element analysis: Al, As, B, Ba, Be, Bi, Ca, Cd, Ce, Co, Cr, Cs, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Hg, Ho, In, K, La, Li, Lu, Mg, Mn, Mo, Na, Nb, Nd, Ni, Pb, Pr, Rb, Sb, Sc, Se, Sm, Sn, Sr, Ta, Tb, Te, Th, Ti, Tl, Tm, U, V, W, Y, Yb, Zn, Zr, 41 element analysis: Al, As, B, Ba, Be, Bi, Ca, Cd, Co, Cr, Cs, Cu, Ga, Ge, Fe, Hf, Ir, K, Li, Mg, Mn, Mo, Na, Nb, Ni, Pb, Re, Sb, Sn, Sr, Ta, Te, Th, Ti, Tl, U, W, V, Y, Zn, Zr, 30 element analysis: Al, As, B, Ba, Be, Bi, Ca, Cd, Co, Cr, Cu, Ga, Ge, Fe, K, Li, Mg, Mn, Mo, Na, Ni, Pb, Sb, Sn, Sr, Ti, W, V, Zn, Zr, Custom 30-element package: You choose any 30 elements from our full 58-element list., Additional noble metals: Add the analysis of noble metals to any package from the options given below: Ag, Au, Pd, Pt, Rh, Ru, Ag, Au, Pt, Pd.. Additional elements are available upon request, Detection limits are in the ppm–ppb range (106–1010at/cm2), See this example report: VPD ICP-MS analysis, for more details. This measurement is primarily intended for 100, 150, 200, and 300 mm bare-silicon wafers, but we also offer ICP-MS analyses for other wafer sizes and thin films up to a few µm thickness. The most typically used instruments include the following: Perkin-Elmer NexION 350S ICP-MS, Perkin-Elmer Sciex ELAN 6100 DRC II ICP-MS, Thermo Fisher iCAP TQe ICP-MS, Finnigan element2 ICP-MS. Express turnaround (1–3 business days) can be arranged upon request for an additional charge. Contact us for more information and to request a quote.

Determination of particle contamination on wafers or thin films up to 300 mm in diameter using an optical particle counter in a class 10 (ISO Class 4) cleanroom. We have access to several instruments (KLA-Tencor Surfscan 6200, Candela CS10V, etc.), and upon request, two different instruments can be used to cross-verify particle counts. The results are reported as particle counts by size range, in both tabular and histogram format. Contamination maps of wafer surfaces are also provided. Please note that the best-case detection limit of 0.08 µm applies to latex particles on bare silicon wafers. The smallest detectable particle size is typically higher for thin films due to interference from the coating. When requesting an offer, please disclose the size and number of wafers, and let us know whether they are bare or coated. In case of coated wafers, please also disclose the composition and approximate thickness of the film.

XPS is a semi-quantitative technique used to measure the elemental composition of material surfaces. In addition, it can also determine the binding state of the atoms. XPS is a surface-sensitive technique. Typical probing depth is 3-9 nm, and detection limits range roughly between 0.1 and 1 atomic %. XPS can measure elements from Li to U. The elemental composition is reported in at.% and measured on 1 area of a few 100 µm. Upon request, we can measure smaller areas or depth profiles, and a binding state determination can also be provided. Measurements are typically performed using one of the following instruments: PHI Genesis, Thermo Fisher ESCALAB 250Xi, PHI Quantum 2000. Synchrotron XPS is also available. Contact us for more information and a quote for your project.

The method is intended to determine the compatibility of devices and subassemblies to withstand moderately severe shocks. Testing conditions simulate real-world scenarios where the equipment might encounter sudden, forceful impacts. This is a destructive test intended for device qualification, carried out in accordance with JESD22-B110B. Example testing conditions: Pulse shape: saw-tooth curve , Acceleration: 100G , Duration: 2ms, The device is tested along 3 axes and subjected to one shock in both the positive and negative directions for each axis being tested, Service condition C.

Grazing incidence X-ray diffraction (GI-XRD) measurement for thin films and surface layers. The measurement provides the following information: XRD spectrum and identification of the phase(s), Crystallinity, crystallite size, lattice parameters, and strain of the phase. NOTE that these parameters are determined if the samples are highly crystalline. It may not be possible to determine them if the crystallinity is insufficient.. For a practical illustration of how the results are expressed, see our example report: GI-XRD measurement. Best GI-XRD results are typically achieved for samples containing up to 300 nm thick surface layers with under 10 nm RMS roughness. Thicker films and coatings with rougher surfaces can also be characterized, but the quality of the data is generally lower for rough samples, and the sample properties below 300 nm depths are typically not reflected in the results. One of the following instruments is typically used to perform the measurements: Rigaku SmartLab, Panalytical X'Pert Pro MPD, Bruker D8 Discover, Malvern Empyrean, GNR APD2000PRO. By default, the GI-XRD is conducted in ambient conditions, but temperatures of 25 to 1100 °C can be used to study crystallinity as a function of temperature. The measurements can also be performed under inert gas or vacuum if needed. Please contact our experts to discuss the available temperature and atmosphere combinations.