Parisa Talebi

VPD ICP-MS allows the determination of trace metal contamination on the surface of wafers. The full surface of the wafer is scanned during the analysis, unless edge exclusion (2 mm, 5 mm, etc.) is requested. VPD ICP-MS is performed using acid to dissolve the top surface of the wafer before the determination of elemental concentrations with ICP-MS. Please note that lighter elements, such as H, C, N, O, and F, cannot be analyzed. We offer different analysis packages for a wide range of elements: 58 element analysis: Al, As, B, Ba, Be, Bi, Ca, Cd, Ce, Co, Cr, Cs, Cu, Dy, Er, Eu, Fe, Ga, Gd, Ge, Hf, Hg, Ho, In, K, La, Li, Lu, Mg, Mn, Mo, Na, Nb, Nd, Ni, Pb, Pr, Rb, Sb, Sc, Se, Sm, Sn, Sr, Ta, Tb, Te, Th, Ti, Tl, Tm, U, V, W, Y, Yb, Zn, Zr, 41 element analysis: Al, As, B, Ba, Be, Bi, Ca, Cd, Co, Cr, Cs, Cu, Ga, Ge, Fe, Hf, Ir, K, Li, Mg, Mn, Mo, Na, Nb, Ni, Pb, Re, Sb, Sn, Sr, Ta, Te, Th, Ti, Tl, U, W, V, Y, Zn, Zr, 30 element analysis: Al, As, B, Ba, Be, Bi, Ca, Cd, Co, Cr, Cu, Ga, Ge, Fe, K, Li, Mg, Mn, Mo, Na, Ni, Pb, Sb, Sn, Sr, Ti, W, V, Zn, Zr, Custom 30-element package: You choose any 30 elements from our full 58-element list., Additional noble metals: Add the analysis of noble metals to any package from the options given below: Ag, Au, Pd, Pt, Rh, Ru, Ag, Au, Pt, Pd.. Additional elements are available upon request, Detection limits are in the ppm–ppb range (106–1010at/cm2), See this example report: VPD ICP-MS analysis, for more details. This measurement is primarily intended for 100, 150, 200, and 300 mm bare-silicon wafers, but we also offer ICP-MS analyses for other wafer sizes and thin films up to a few µm thickness. The most typically used instruments include the following: Perkin-Elmer NexION 350S ICP-MS, Perkin-Elmer Sciex ELAN 6100 DRC II ICP-MS, Thermo Fisher iCAP TQe ICP-MS, Finnigan element2 ICP-MS. Express turnaround (2 or 3 business days) can be arranged upon request for an additional charge. Contact us for more information and to request a quote.

N2 adsorption analysis to determine specific surface area, pore size, and total pore volume of solid materials. Specific surface areas (BET and Langmuir) and pore sizes (BJH and DFT) can be analyzed with this method. The required sample amount depends on the expected surface area. As a rule of thumb, at least 5 m2 of surface area should be available for measurement. Mesopores between 1.7 nm to 300 nm and micropores between 0.5 nm - 2nm can be analyzed. The following gas adsorption devices are used for this measurement: Micromeritics Gemini VII 2390, Micromeritics ASAP 2020, Micromeritics TriStar II 3020, Anton Paar Nova 800.

In XPS depth profiling, ion gun etching cycles and XPS analysis cycles are alternated to obtain semi-quantitative information on the elemental composition (at.%) of the sample as a function of depth. The binding states of atoms can also be analyzed as a function of depth to determine the chemistry of the sample and its variations with depth. XPS depth profiling is a destructive technique with an analysis area diameter ranging from 10 µm to several 100 µm. Sputtering is done with an Ar-cluster GCIB ion beam or Ar monoatomic ions, and XPS measurements are typically performed using one of the following instruments: PHI Genesis, Thermo Fisher ESCALAB 250Xi, PHI Quantum 2000.

Analysis of the specific surface area of porous, solid materials according to the BET (Brunauer–Emmett–Teller) theory. Analysis can be performed with N2 or Kr gases, depending on the expected surface area of the material. BET curve and the specific surface area (in m2/g) are reported. The required sample amount depends on the expected surface area. As a rule of thumb, at least 5 m2 of surface area should be available for measurement. The following gas adsorption devices are used for this measurement: Micromeritics Gemini VII 2390, Micromeritics ASAP 2020, Micromeritics TriStar II 3020, Anton Paar Nova 800.