Time of flight elastic recoil detection analysis
Time-of-flight elastic recoil detection analysis (ToF-ERDA) is a material analysis method that gives elemental depth profiles and concentration of elements in a sample. With ToF-ERDA it is possible to detect all elements including hydrogen isotopes. ToF-ERDA is considered a non-destructive and quantitative method.
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Time-of-flight-elastic recoil detection analysis (ToF-ERDA), also known as elastic recoil detection (ERD), elastic recoil scattering (ERS), forward recoil spectrometry (FRS), is an ion beam analysis (IBA) technique that is used to detect elemental concentrations and compositions in thin layer materials. ToF-ERDA can detect all elements and distinguish different isotopes of hydrogen. It can detect concentrations down to 0.1–0.5 atomic percent. ToF-ERDA also gives information about the elemental depth profile of the surface, therefore it can describe the vertical order and concentrations of the elements. Depth resolutions of 5-20 nm are usually achieved. ToF-ERDA is a non-destructive method, and the results are quantitative.
The ToF-ERDA uses a heavy ion beam (such as Cl, I, Au) with energies of up to 100 MeV. The energetic ion beam is directed at a sample at a known angle. The beam ionizes the sample atoms and the ions form the sample surface layers recoil in a forward direction. Recoiled ions are then detected.
In the ToF- ERDA energy and time of flight of the recoil ion are measured simultaneously. The recoiled ions are typically detected with two timing detectors and an energy detector. Filters are used to separate electrons from recoil ions. Time-of-flight is measured with the timing detectors over a fixed distance. The energy detector distinguishes the different masses of the ions. Conversion of time/energy spectra is used to create depth profile by using the known relationship of energy loss by unit of length of the ions in the sample.
Suitable sample matrices
- Inorganic samples with a flat surface
- Semiconductor materials
- Thin film materials
Ideal uses of ToF-ERDA
- ToF-ERDA is used for elemental analysis and depth profiling in thin films.
- It is used to profile light elements such as H, B, C, N, and O in thin films.
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Frequently asked questions
ToF-ERDA is used to measure elemental concentrations in thin film materials.
It can produce elemental depth profiles with depth resolution of 5 nm to 20 nm.
To get reliable results the sample must have a flat surface and roughness should be less than 10 nm.
Because of the induced ion beam damage, only inorganic samples can be analysed.
The depth resolution of 5 nm to 20 nm.
The detection limit is 0.1–0.5 atomic percent.
Inorganic materials with a flat surface can be analysed with ToF-ERDA.
Typically samples are thin film materials.
Measurlabs offers a variety of laboratory analyses for product developers and quality managers. We perform some of the analyses in our own lab, but mostly we outsource them to carefully selected partner laboratories. This way we can send each sample to the lab that is best suited for the purpose, and offer high-quality analyses with more than a thousand different methods to our clients.
When you contact us through our contact form or by email, one of our specialists will take ownership of your case and answer your query. You get an offer with all the necessary details about the analysis, and can send your samples to the indicated address. We will then take care of sending your samples to the correct laboratories and write a clear report on the results for you.
Samples are usually delivered to our laboratory via courier. Contact us for further details before sending samples.
ToF-ERDA detects all elements in thin film materials with high accuracy. It gives elemental depth profiles from 5 nm to 20 nm. Measur provides reliable ToF-ERDA services.