Rutherford backscattering spectrometry (RBS) is an ion beam analysis method for determining the elemental composition of thin films. RBS enables quantitative depth profiling up to a depth of 1 µm.
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What is Rutherford backscattering spectrometry used for?
Rutherford backscattering spectrometry (RBS) is an ion beam technique for thin film characterization and studying solid surfaces. The technique gives quantitative information on the different elements present on the surface of the sample and as a function of depth. The maximum profiling depth of RBS is 1 micrometer.
Strength and limitations
+ The main advantage of the RBS technique is its ability to provide depth profiles for multiple elements during one measurement without reference standards.
- RBS is suitable for the analysis of heavy elements on a light substrate, but light elements on a heavy substrate cannot be detected.
How does RBS work?
Typically, RBS uses a high-energy beam of He2+ ions that is directed onto a sample surface. Some of the incoming ions are scattered elastically from the sample's atomic nuclei. These backscattered ions are detected and the energy distributions and yield of ions at a given angle are measured. The detected energy is dependent on the mass of the target nucleus and the depth of the scattering event.
Suitable sample matrices
- Thin films
- Optical coatings
- GaN and Si wafers
Ideal uses of RBS analysis
- Determining the thickness of films and coatings
- Analyzing the composition of thin films
- Determining the depth profiles of a sample's surface layers
Frequently asked questions
RBS is used to analyze the elemental composition of solid surfaces. The technique can give elemental information on the surface of a solid sample down to ~1,000 nm depth.
RBS is not suitable for the analysis of light elements in heavy matrices. The sample must also be vacuum compatible.
Thin films, semiconductors, and coatings are common sample materials for RBS analysis.
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