Secondary ion mass spectrometry (SIMS)
Secondary ion mass spectrometry (SIMS) is a depth profiling method that can be used for a wide variety of solid materials to determine impurities or dopants.
All elements from hydrogen to uranium can be detected.
Standards are needed to get quantitative results.
Profiling can be done from 10 nm to a few µm thickness and needs to be done in electronegative or electropositive modes depending on elements.
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More information about the method:
Secondary ion mass spectrometry (SIMS)- Suitable sample matrices
- Solids, thin films, bulk materials
- Required sample quantity
- 1x1 cm
- Typical turnaround time
- 2 – 3 weeks after receiving the samples
- Detection limit
- Down to ppm - ppb
- Available quality systems
- Measurlabs validated method
- Device types
- Method expert
Semiconductors
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