VPD ICP-MS
VPD ICP-MS allows the determination of trace metal contamination on the surface of wafers. The full surface of the wafer is scanned during the analysis.
VPD ICP-MS analysis is performed using acid to dissolve the top surface of the wafer.
We have package analysis for a wide range of elements and can also provide analysis for noble metals.
Elements such as H, C, N, O, or F cannot be analyzed by the ICP-MS method.
This product price is for the analysis on 100, 150, 200, and 300 mm bare-silicon wafers.
For other sizes, thin-film ICP-MS testing or more information about our packages – contact us!
Detection limit: ppm - ppb (107-109at/cm2)
More information about the method:
Vapour phase decomposition ICP-MS- Suitable sample matrices
- Thin films, coatings, silicon wafers
- Required sample quantity
- Full wafer
- Typical turnaround time
- 2 – 3 weeks after receiving the samples
- Available quality systems
- Measurlabs validated method
- Device types
- Method expert
Semiconductors
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